shantou huashan electronic devices co.,ltd . ? applications l h igh - speed switching. ? absolute maximum ratings ? t a =25 ??? ? electrical characteristics ? t a =25 ??? symbol characteristics min typ max unit test conditions bv dss drain - source breakdown voltage 60 0 v i d = 250 | a ,v gs =0v i dss zero gate voltage drain current 10 | a v ds = 600v ? v gs =0 i gss gate ? source leakage current ? 100 na v gs = ? 3 0v , v ds =0v v gs(th) gate threshold voltage 2.5 4.5 v v ds = v gs , i d = 250 | a r ds(on) static drain - source on - resistance 3.8 5.0 |? v gs =10v, i d = 1.0 a gfs forward transconductance 2.05 s v ds = 40 v , i d = 1.0 a * ciss input capacitance 180 235 pf coss output capacitance 20 25 pf v ds =2 5 v , v gs = 0, f= 1 mhz crss reverse transfer capacitance 4.3 3 pf t d( on ) turn - on delay time 9 28 ns tr rise time 25 60 ns t d( off ) turn - off delay time 24 58 ns t f fall time 28 66 ns v dd = 300 v, i d = 2a r g = 25 |? * qg total gate charge 8.5 12 nc v ds = 480 v qgs gate ? source charge 1.3 nc v gs = 10v qgd gate ? drain charge 4.1 nc i d =2a * is continuous source current 1.8 a v sd diode forward voltage 1.4 v i s = 1.8a , v gs = 0 rth ? j - c ? thermal resistance ? junctio n - to - case 2.87 ?? /w *p ulse test o p ulse width ? 300 | s ? duty cycle ? 2% n - channel mosfet t stg ?a?a storage temperature ?-?-?-?-?-?-?-?-?-?-?- - 5 5 ~1 50 ?? t j ?a?a operating junction temperature ?-?-?-?-?-?- ?-?- ?-?- 150 ?? p d ?a?a allowable power dissipation ? t c =25 ?? ? ?-?- ?-?-?-?-?- 4 4 w v dss ?a?a drain - source voltage ?-?-?-?-?-?-?-?-?-?-?-?-?- 60 0v v gss ?a?a gate - source voltage ?-?-?-?-?-?-?-?-?-?-?-?-?- 3 0v i d ?a?a drain current ? t c =25 ?? ? ?-?-?-?-?-?-?- ?- ?- ?-?- ?-?- ?- 1.8 a h f u 2n 60 1 d g 2 d d 3 d s to - 251
shantou huashan electronic devices co.,ltd . n - channel mosfet HFU2N60
shantou huashan electronic devices co.,ltd . n - channel mosfet HFU2N60
shantou huashan electronic devices co.,ltd . n - channel mosfet HFU2N60
shantou huashan electronic devices co.,ltd . n - channel mosfet HFU2N60
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