smd type transistors 1 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter www.kexin.com.cn silicon npn triple diffused type 2sC5356 features excellent switching times: t f =0.5s(max)(i c =1.2a) high collectors breakdown voltage: v ceo = 800 v high dc current gain: h fe =15(min)(i c =0.15a) absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 900 v collector-emitter voltage v ceo 800 v emitter-base voltage v ebo 7v collector current ( dc) i c 3 collector current (pulse) i cp 5 base current i b 1a collector power dissipation ta = 25 1.5 t c =25 25 junction temperature t j 150 storage temperature range t stg -55to+150 p c a w
2 smd type transistors www.kexin.com.cn electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cut-off current i cbo v cb = 720 v, i e = 0 100 a emitter cut-off current i ebo v eb =7v,i c =0 10 a collector-base breakdown voltage v (br) cbo i c =1ma,i e = 0 900 v collector-emitter breakdown voltage v (br) ceo i c =10ma,i b = 0 800 v v ce =5v,i c =1ma 10 v ce =5v,i c =0.15a 15 collector-emitter saturation voltage v ce (sat) i c =1.2a,i b =0.24a 1.0 v base-emitter saturation voltage v be (sat) i c =2a,i b =0.24a 1.3 v switching time rise time t r 0.7 switching time storage time t stg 4.0 switching time fall time t f 0.5 dc current gain s h fe 2sC5356 marking marking C5356
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