AO4302 v ds i d (at v gs =10v) 23a r ds(on) (at v gs =10v) < 4m w r ds(on) (at v gs = 4.5v) < 5m w symbol v ds drain-source voltage 30 the AO4302 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v g d s v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jl 2.3 t a =70c junction and storage temperature range -55 to 150 c power dissipation b p d t a =25c w 3.6 thermal characteristics units parameter typ max v 20 gate-source voltage drain-source voltage 30 v mj 120 a 49 t a =25c t a =70c avalanche energy l=0.1mh c pulsed drain current c continuous drain current avalanche current c a i d 23 18 316 maximum junction-to-ambient a maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 11 65 15 c/w r q ja 27 52 35 g d s 30v n-channel mosfet general description features www.freescale.net.cn 1 / 6
symbol min typ max units bv dss 30 36 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 10 v gs(th) gate threshold voltage 1.3 1.8 2.3 v i d(on) 316 a 3.2 4.0 t j =125c 4.8 6.0 3.9 5.0 m w g fs 120 s v sd 0.7 1 v i s 5 a c iss 2310 2891 3470 pf c oss 330 474 620 pf c rss 150 256 360 pf r g 0.7 1.6 2.4 w q g (10v) 41 51.9 63 nc q g (4.5v) 19 24.8 30 nc q gs 7.5 nc q gd 10.9 nc t d(on) 7.0 ns t 4.8 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =10v, v =15v, r =0.75 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =20a gate source charge r ds(on) static drain-source on-resistance m w i s =1a,v gs =0v v ds =5v, i d =20a v gs =4.5v, i d =18a diode forward voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss zero gate voltage drain current m a drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz switching parameters v ds =v gs i d =250 m a v ds =0v, v gs = 20v gate-body leakage current forward transconductance gate drain charge total gate charge t r 4.8 ns t d(off) 41.5 ns t f 8.8 ns t rr 11 13.8 17 ns q rr 24 30.8 37 nc body diode reverse recovery charge i f =20a, di/dt=500a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w turn-off fall time body diode reverse recovery time i f =20a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. AO4302 30v n-channel mosfet www.freescale.net.cn 2 / 6
typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 1 2 3 4 5 6 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =18a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 10 20 30 40 50 60 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3v 10v 4.5v 0 10 20 30 40 50 60 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 1 2 3 4 5 6 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =18a v gs =10v i d =20a 0 2 4 6 8 10 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =20a 25 c 125 c 0 10 20 30 40 50 60 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3v 10v 4.5v AO4302 30v n-channel mosfet www.freescale.net.cn 3 / 6
typical electrical and thermal characteristics 0 2 4 6 8 10 0 10 20 30 40 50 60 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 3500 4000 0 5 10 15 20 25 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =20a 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area (note f) 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 100ms 10ms 1.0 10.0 100.0 1000.0 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 9: single pulse avalanche capability (note c ) t a =25 c t a =150 c t a =100 c t a =125 c 0 2 4 6 8 10 0 10 20 30 40 50 60 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 3500 4000 0 5 10 15 20 25 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =20a 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) figure 11: single pulse power rating junction-to-am bient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area (note f) 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 100ms 10ms 1.0 10.0 100.0 1000.0 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 9: single pulse avalanche capability (note c ) t a =25 c t a =150 c t a =100 c t a =125 c AO4302 30v n-channel mosfet www.freescale.net.cn 4 / 6
typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =65 c/w 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =65 c/w AO4302 30v n-channel mosfet www.freescale.net.cn 5 / 6
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr AO4302 30v n-channel mosfet www.freescale.net.cn 6 / 6
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