maximum reverse recovery time trr at 25c,i =4ma 100 ns HVRT200 features high speed switching low vf high surge resisitivity for crt discharge high reliability design ultra small pakage applications maximum ratings and characteristics absolute maximum ratings items repetitive peak renerse voltage average output current suege current junction temperature allowable operation case temperature symbols v rrm i o i fsm t j tc condition 10ms sine-half wave peak value ta=25c,resistive load 30 125 100 -40 to +125 units kv ma a peak c c c electrical characteristics (ta=25c unless otherwise specified ) items maximum forward voltage drop maximum reverse current symbols v f ir 1 ir 2 conditions at 25c,v r =20kv at 100c,v r =20kv units v a a f =2ma,i r junction capacitance cj at 25c,v r storage temperature t stg is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. outline drawings : mm HVRT200 cathode mark 29 min. 29 min. 12 o 3.0 o 0.6 cathode mark lot no. 20kv 30ma high voltage diodes 2012 =0v,f=1mhz 1.0 hvrt type mark HVRT200 HVRT200 35 20 2.0 3.0 20 x light power supply laser voltage doubler circuit microwave emission power pf vvvv gete electronics co.,ltd http://www.getedz.com e-mail:sales@getedz.com at 25c,i f =i f(av) hvca tm
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