any changing of specification will not be informed individual C945T npn silicon plastic-encapsulate transistor e l e k t r o n i s c h e b a u e l e m e n t e f e a t u r e s l o w n o i s e e x c e l l e n t h c o m p l e m e n t a r y t o a 7 3 3 t n o i s e f i g u r e n f v c e = 6 v , i c = 0 . 1 m a , r g = 1 0 k w , f = k m h z 1 0 d b f e l i n e a r i t y m a x i m u m r a t i n g s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) p a r a m e t e r s y m b o l v a l u e u n i t s 1 2 to-92 1 . e m i t t e r 2 . b a s s c o l l e c t o r 3 . 1 2 3 3 0 1 - j u n - 2 0 0 5 rev. b p a g e 1 o f 2 colle ctor-ba s e v o lt age v cbo 60 v colle ctor-emi tter v o lt age v ceo 50 v emitter-ba s e v o lt age v ebo 5 v colle ctor cu rrent co ntinuo us i c 150 ma colle ctor po wer dissi p ati on p c 400 mw jun c tion, s t orage t e mpe r at ure t j , t stg 125, -55 ~ 1 2 5 c electrical characte r ist i cs (t amb = 25 c unles s other w i s e specifie d ) parameter sy mbol t e s t con d iti ons min t y p max u nit s colle ctor-ba s e brea kdo w n v o lt age v (br)cbo i c = 1ma, i e = 0 60 v colle ctor-emi tter brea kdo w n v o lt a g e v (br)ce o i c = 100 a, i b = 0 50 v emitter-ba s e brea kdo w n v o lt age v (br)eb o i e = 100ma, i c = 0 5 v colle ctor cut-of f current i cbo v cb = 60v , i e = 0 0.1 a colle ctor cut-of f current i ceo v ce = 45v 0.1 a emitter cut-of f current i ebo v eb = 5v , i c = 0 0.1 a h fe(1) v ce = 6v , i c = 1m a 70 700 dc cur r e n t gain h fe(2) v ce = 6v , i c = 0.1 m a 40 colle ctor-emi tter saturatio n v o lt age v ce(sat) i c = 100ma, i b = 10ma 0.3 v base -emitter saturation v o lt age v be(sat) i c = 100ma, i b = 10ma 1 v colle ctor po wer dissi p ati on c ob v cb = 10v , i e = 0, f = 1mhz 3.0 pf t r a n sition f r e quen cy f t v ce =6v , i c =10m a, f=30mhz 200 mhz classifica tion of hfe rank o y gr bl rang e 70-1 40 120-240 200-400 350-700 rohs compliant product a suffix of "-c" specifies halogen & lead-free
any changing of specification will not be informed individual typical characteristics http://www.secosgmbh.com elektronische bauelemente 0 1 - j u n - 2 0 0 5 rev. b p a g e 2 o f 2 c945 t npn silicon plastic-encapsulate transistor
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