symbol v ds v gs i dm i ar e ar t j , t stg symbol typ ma x 8.1 12 33 40 r jl 0.84 1.5 junction and storage temperature range -55 to 175 mj w 50 w c repetitive avalanche energy l=0.1mh c 140 power dissipation a a i d avalanche current c 30 a 200 continuous drain current b,g maximum units parameter t c =25c g t c =100c b 30 110 78 t a =25c p dsm 3.1 power dissipation b t c =25c p d 100 t c =100c t a =70c 2 c/w absolute maximum ratings t a =25c unless otherwise noted v v 20 pulsed drain current gate-source voltage drain-source voltage maximum junction-to-ambient a steady-state maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w AOB416 features v ds (v) = 30v i d = 110a (v gs = 10v) r ds(on) < 4.5m ? (v gs = 10v) @ 30a r ds(on) < 6.5m ? (v gs = 4.5v) @ 30a general description the AOB416 uses advanced trench technology to provide excellent r ds(on) , shoot-through immunity and body diode characteristics. this device is ideally suited for use as a low side switch in cpu core power conversion. standard product AOB416 is pb- free (meets rohs & sony 259 specifications). a ob416l is a green product ordering option. a ob416 and AOB416l are electrically identical. g d s g d s t o-263 d2-pak t op view drain connected to tab effect transistor n-channel enhancement mode field www.freescale.net.cn 1 / 5
AOB416 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1.2 1.8 2.4 v i d(on) 110 a 3.5 4.5 t j =125c 5.3 6.5 5.15 6.5 m ? g fs 94 s v sd 0.64 1 v i s 110 a c iss 6060 pf c oss 638 pf c rss 355 pf r g 0.45 ? q g (10v) 96.4 nc q g (4.5v) 46.4 nc q gs 13.6 nc q gd 16 nc t d(on) 15.5 ns t r 28.2 ns t d(off) 52.5 ns t f 31 ns t rr 31.2 ns q rr 19.3 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =4.5v, v ds =15v, i d =30a turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.5 ? , r gen =3 ? turn-off fall time turn-on delaytime m ? v gs =4.5v, i d =30a i s =1a,v gs =0v v ds =5v, i d =30a maximum body-diode continuous current input capacitance output capacitance dynamic parameters r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =250 a v ds =24v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =30a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =4.5v, v ds =5v v gs =10v, i d =30a reverse transfer capacitance i f =30a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on steady-state r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design, and the maximum temperature of 175c may be used if the pcb or heatsink allows it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by the package current capability. rev 4 : june 2005 www.freescale.net.cn 2 / 5
AOB416 typical electrical and thermal characteristics 0 10 20 30 40 50 60 012345 v ds (volts) figure 1: on-region characteristics i d (a) v gs =3v 10v 3.5 v 4.5 v 0 10 20 30 40 50 60 1 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 20406080100 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 2 4 6 8 10 12 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =30a 25c 125c i d =30a www.freescale.net.cn 3 / 5
AOB416 typical electrical and thermal characteristics 0 2 4 6 8 10 0 20406080100 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 1000 2000 3000 4000 5000 6000 7000 8000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z ja normalized transient thermal resistance c oss c rss 0.1 1 10 100 1000 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =30a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =40c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c www.freescale.net.cn 4 / 5
AOB416 typical electrical and thermal characteristics 0 20 40 60 80 100 120 0.00001 0.0001 0.001 0.01 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) t a =25c dd d a v bv i l t ? ? = 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) www.freescale.net.cn 5 / 5
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