photo ic photo ic diode spectral response close to human eye sensitivity s9066-111, S9067-101 the s9066-111, S9067-101 photo ics have spectral response close to human eye sensitivity. two active areas are made on a single chip. one is for detecting light in the visible to near infrared range and the other is only sensitive to near infrared light and used for o utput signal correction. almost only the visible range can be measured by finding the difference between the two output signals in the internal current amplifier circuit. compared to previously available devices, these photo ics offer lower output fluctuations for light sources producing the same illuminance at different color temperatures. features l spectral response close to human eye sensitivity is attained without using visual-compensated filter. l operation just as easy to use as a photodiode l large output current equivalent to phototransistors l lower output-current fluctuations l excellent linearity l low output fluctuations for light sources producing the same illuminance at different color temperatures applications l energy-saving sensor for tvs, etc. l light dimmers for liquid crystal panels l cellular phone backlight dimmers l various types of light level measurement 1 absolute maximum ratings (ta=25 c) parameter symbol s9066-111 S9067-101 unit reverse voltage v r -0.5 to 12 v photocurrent i l 5 ma forward current i f 5 ma power dissipation * 1 p 250 150 mw operating temperature topr -30 to +80 c storage temperature ts t g -40 to +85 c *1: derate power dissipation at a rate of the following rate above ta=25 c. s9066-111: -3.3 mw/c, S9067-101: -2.0 mw/c electrical and optical characteristics (ta=25 c) s9066-111 S9067-101 parameter symbol condition min. typ. max. min. typ. max. unit spectral response range 300 to 820 300 to 820 nm peak sensitivity wavelength p - 560 - - 560 - nm dark current i d v r =5 v - 1.0 50 - 1.0 50 na photocurrent i l v r =5 v, 2856 k, 100 lx 0.19 0.27 0.35 0.18 0.26 0.34 ma rise time * 2 tr - 6.0 - - 6.0 - ms fall time * 2 tf 10 to 90 %, v r =7.5 v r l =10 k ? , =560 nm - 2.5 - - 2.5 - ms *2: rise/fall time measurement method pulsed light from led ( l =560 nm) v o load resistance r l 7.5 v 90 % 2.5 v 10 % v o tr tf 0.1 f kpicc0041ea
photo ic diode s9066-111, S9067-101 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamats u.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv?gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8 -509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?200 8 hamamatsu photonics k.k. cat. no. kpic1052e05 feb. 2008 dn illuminance ( lx ) (typ. ta=25 ?c, v r =5 v, 2856 k) photo current 0.1 1 10 10 na 100 na 1 ? 10 ma 1 ma 100 ? 10 ? 100 1000 ambient temperature ( ? c) dark current 1 na 100 na 10 a 10 na 1 a 100 pa 050 25 75 100 (typ. v r =5 v) 1000 100 10 1 0.1 100 1 k 10 k load resistance ( ? ) 100 k 1 m rise/fall time (ms) (typ. ta=25 ? c, v r =7.5 v, =560 nm, vo=2.5 v) tr tf 2 cathode anode tolerance unless otherwise noted: 0.2 active area position accuracy: x, y 0.3 electrodes 0.4 3.2 0.2 0.4 0.13 2.3 2.2 1.4 0.1 2.7 (4 ) 0.5 center of active area active area 0.32 0.46 2.0 0.1 0.25 0.15 0.6 1.1 0.1 photosensitive surface kpicb0078ec dimensional outlines (unit: mm) spectral response 0.1 0.2 0.3 0.4 0.5 0.7 0.9 0.6 0.8 1.0 0 200 400 600 800 wavelength (nm) 1000 1200 relative sensitivity (typ. ta=25 ? c, v r =5 v) s9066-111 S9067-101 human eye sensitivity kpicb0076eb dark current vs. ambient temperature kpicb0115ea rise/fall times vs. load resistance s9066-111 S9067-101 photosensitive surface 10 ? 5 ? 10 ? 5 ? 0.75 0.15 10 ? 5 ? 10 ? 5 ? 0.25 +0.15 -0.1 1.0 2.0 2.0 (depth 0.15) anode (anode) nc cathode tolerance unless otherwise noted: 0.1, 2 ? shaded area indicates burr. values in parentheses indicate reference value. 5.2 0.3 (includig burr) center of active area active area 0.46 0.32 5.2 0.3 (includig burr) (specified at the lead root) (2 ) 1.0 (depth 0.15) 2.5 0.2 5.0 2.05 0.2 5.0 16.5 1.0 (0.8) (1.0) 1.2 0.2 1.27 1.27 1.27 (4 ) 0.55 (4 ) 0.45 kpica0050ee kpica0051ec operating circuit example kpicc0091eb photodiode for signal offset cathode anode c l r l vout reverse bias power supply the drawing surrounded by the dotted line shows a schematic diagram of the photo ic. current amp (approx. 30000 times) photodiode for signal detection internal protection resistance (approx. 150 w ) the photo ic diode must be reverse- biased so that a positive potential is applied to the cathode. to eliminate high-frequency components, we recommend placing a load capacitance c l in parallel with load resistance r l as a low-pass filter. cut-off frequency fc = 2 c l r l 1 . . linearity (s9066-111) kpicb0083eb
|
