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| SI4431DY vishay siliconix document number: 70151 s-49534erev. c, 06-oct-97 www.siliconix.com faxback 408-970-5600 1 p-channel 30-v (d-s) mosfet 30 0.040 @ v gs = 10 v 5.8 30 0.070 @ v gs = 4.5 v 4.5 sd s d sd g d so-8 5 6 7 8 top view 2 3 4 1 sss g d d d d p-channel mosfet drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 5.8 a continuous drain current (t j = 150 c) a t a = 70 c i d 4.6 a pulsed drain current i dm 30 a continuous source current (diode conduction) a i s 2.3 maximum power dissipation a t a = 25 c p d 2.5 w maximum power dissipation a t a = 70 c p d 1.6 w operating junction and storage temperature range t j , t stg 55 to 150 c maximum junction-to-ambient a r thja 50 c/w notes a. surface mounted on fr4 board, t 10 sec. for spice model information via the worldwide web: http://www.siliconix.com/www/product/spice.htm SI4431DY vishay siliconix www.siliconix.com faxback 408-970-5600 2 document number: 70151 s-49534erev. c, 06-oct-97 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a zero gate v oltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 70 c 25 a on - state drain current b i d(on) v ds 5 v, v gs = 10 v 30 a on - state drain current b i d(on) v ds 5 v, v gs = 4.5 v 7 a drain - source on - state resistance b r ds(on) v gs = 10 v, i d = 5.3 a 0.029 0.040 drain - source on - state resistance b r ds(on) v gs = 4.5 v, i d = 2.0 a 0.047 0.070 forward transconductance b g fs v ds = 15 v, i d = 5.3 a 9.3 s diode forward voltage b v sd i s = 2.3 a, v gs = 0 v 0.78 1.2 v total gate charge q g v15vv10vi53a 22 35 c gate-source charge q gs v ds = 15 v, v gs = 10 v, i d = 5.3 a 3.95 nc gate-drain charge q gd 3.5 turn-on delay time t d(on) v15vr15 11.5 20 rise time t r v dd = 15 v, r l = 15 i 1 a v 10 v r 6 12 20 turn-off delay time t d(off) dd , l i d 1 a, v gen = 10 v, r g = 6 38 55 ns fall time t f 15 25 source-drain reverse recovery time t rr i f = 2.3 a, di/dt = 100 a/ s 50 80 notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. SI4431DY vishay siliconix document number: 70151 s-49534erev. c, 06-oct-97 www.siliconix.com faxback 408-970-5600 3 0 6 12 18 24 30 0246810 0 2 4 6 8 10 0 5 10 15 20 25 0 0.4 0.8 1.2 1.6 2.0 50 25 0 25 50 75 100 125 150 0 0.04 0.08 0.12 0.16 0.20 0 6 12 18 24 30 0 400 800 1200 1600 2000 0 6 12 18 24 30 0 6 12 18 24 30 02468 '&#'& $&$ %& % $!% $ $&$ %& % & $ !)% %&! (% $ ! '$$!& v ds drain-to-source voltage (v) drain current (a) i d v gs = 10, 9, 8, 7, 6, 5 v 3 v v gs gate-to-source voltage (v) drain current (a) i d t c = 55 c 125 c gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs c rss c oss c iss v ds = 15 v i d = 5.3 a on-resistance ( r ds(on) ) i d drain current (a) # &! !)% %&! (% '!& "! #$&'$ v gs = 10 v i d = 5.3 a t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) v gs = 10 v v gs = 4.5 v 25 c 4 v SI4431DY vishay siliconix www.siliconix.com faxback 408-970-5600 4 document number: 70151 s-49534erev. c, 06-oct-97 ',) 0 ) #& #' '). ) '$+ ! &0 *#*+ & -* + 0+'0',) '$+ ! ") *"'$ '$+ ! #&!$ ,$* '. ) ')% $#/ " )% $ ) &*# &+ %( & ,& +#'&0+'0% # &+ square wave pulse duration (sec) normalized effective transient thermal impedance on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) time (sec) power (w) 0 0.02 0.04 0.06 0.08 0.10 0246810 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0 50 25 0 25 50 75 100 125 150 t j = 150 c t j = 25 c i d = 5.3 a i d = 250 a variance (v) v gs(th) 30 10 1 0 0.2 0.4 0.6 0.8 1.0 1.4 0 10 20 30 40 50 0.01 0.10 1.00 10.00 2 1 0.1 0.01 10 4 10 3 10 2 10 1 11030 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r thja = 50 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 1.2 |
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