process CP588 small signal transistor pnp - low noise amplifier transistor chip princip al device types 2n2605 2n3799 pn4250a cmpt5086 cmpt5087 process epitaxial planar die size 15 x 15 mils die thickness 9.0 mils base bonding pad area 4.0 x 4.0 mils emitter bonding pad area 5.5 x 5.5 mils top side metalization al - 30,000? back side metalization au - 18,000? process details 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com geometry backside collector r3 (21-august 2006) gross die per 4 inch w afer 53,730
process CP588 typical electrical characteristics 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com r3 (21-august 2006)
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