inchange semiconductor isc product specification isc silicon pnp power transistor 2SB703 description c ollector-emitter breakdown voltage- : v (br)ceo = -80v(min) dc current gain- : h fe = 40~200 @i c = -0.5a complement to type 2sd743 applications designed for use in audio frequency power amplifier, low speed switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -80 v v ceo collector-emitter voltage -80 v v ebo emitter-base voltage -5 v i c collector current-continuous -4 a i cm collector current-peak -6 a i b b base current-continuous -1 a p c collector power dissipation @ t c =25 40 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 3.125 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SB703 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -10ma; i b = 0 -80 v v (br)cbo collector-base breakdown voltage i c = -1ma; i e = 0 -80 v v (br)ebo emitter-base breakdown voltage i e = -1ma; i c = 0 -5 v v ce (sat) collector-emitter saturation voltage i c = -3a; i b = -0.3a b -2.0 v v be (sat) base-emitter saturation voltage i c = -3a; i b = -0.3a b -2.0 v i cbo collector cutoff current v cb = -80v; i e = 0 -10 a i ebo emitter cutoff current v eb = -3v; i c = 0 -10 a h fe-1 dc current gain i c = -20ma; v ce = -5v 30 h fe-2 dc current gain i c = -0.5a; v ce = -5v 40 200 f t current-gain?bandwidth product i c = -0.1a; v ce = -5v; f test = 1.0mhz 10 mhz ? h fe- 2 classifications s r q 40-80 60-120 100-200 isc website www.iscsemi.cn 2
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