?2007 fairchild semiconductor corporation 1 www.fairchildsemi.com FDB14N30 rev. a FDB14N30 300v n-channel mosfet february 2007 unifet tm FDB14N30 300v n-channel mosfet features ? 14a, 300v, r ds(on) = 0.29 @v gs = 10 v ? low gate charge ( typical 18 nc) ?low c rss ( typical 17 pf) ?fast switching ? 100% avalanche tested ? improved dv/dt capability description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power supplies and active power factor correction. absolute maximum ratings thermal characteristics d g s g s d d 2 -pak fdb series symbol parameter FDB14N30 unit v dss drain-source voltage 300 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 1 4 8.4 a a i dm drain current - pulsed (note 1) 56 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 330 mj i ar avalanche current (note 1) 14 a e ar repetitive avalanche energy (note 1) 14 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 140 1.12 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c symbol parameter min. max. unit r jc thermal resistance, junction-to-case -- 0.89 c/w r ja* thermal resistance, junction-to-ambient* -- 40 c/w r ja thermal resistance, junction-to-ambient -- 62.5 c/w * when mounted on the minimum pad size recommended (pcb mount)
2 www.fairchildsemi.com FDB14N30 rev. a FDB14N30 300v n-channel mosfet package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating: pulse width limit ed by maximum junction temperature 2. l = 2.8mh, i as = 14a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 14a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics device marking device package reel size tape width quantity FDB14N30 FDB14N30tm d2-pak 330mm 24mm 800 symbol parameter conditions min. typ. max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 a 300 -- -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c -- 0.3 -- v/ c i dss zero gate voltage drain current v ds = 300v, v gs = 0v v ds = 240v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 7a -- 0.24 0.29 g fs forward transconductance v ds = 40v, i d = 7a (note 4) -- 10.5 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 815 1060 pf c oss output capacitance -- 150 195 pf c rss reverse transfer capacitance -- 17 25 pf switching characteristics t d(on) turn-on delay time v dd = 150v, i d = 14a r g = 25 (note 4, 5) -- 20 50 ns t r turn-on rise time -- 105 120 ns t d(off) turn-off delay time -- 30 70 ns t f turn-off fall time -- 75 160 ns q g total gate charge v ds = 240v, i d = 14a v gs = 10v (note 4, 5) -- 18 25 nc q gs gate-source charge -- 4.5 -- nc q gd gate-drain charge -- 8 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 14 a i sm maximum pulsed drain-source diode forward current -- -- 56 a v sd drain-source diode forward voltage v gs = 0v, i s = 14a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 14a di f /dt =100a/ s (note 4) -- 235 -- ns q rr reverse recovery charge -- 1.6 -- c
3 www.fairchildsemi.com FDB14N30 rev. a FDB14N30 300v n-channel mosfet typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariation vs. s ource current and temperatue figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 10 -1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v * notes : 1. 250 s pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 24681012 10 0 10 1 10 2 150 o c 25 o c -55 o c * notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 5 10 15 20 25 30 35 40 45 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v gs = 20v v gs = 10v * note : t j = 25 o c r ds(on) [ ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 10 0 10 1 10 2 150 o c * notes : 1. v gs = 0v 2. 250 s pulse test 25 o c i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 1000 2000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 v ds = 150v v ds = 60v v ds = 240v * note : i d = 14a v gs , gate-source voltage [v] q g , total gate charge [nc]
4 www.fairchildsemi.com FDB14N30 rev. a FDB14N30 300v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current v s . c a s e t e m p e r a t u r e figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 7 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 5 10 15 i d , drain current [a] t c , case temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * n otes : 1. z jc (t) = 0.89 o c/w max. 2. d uty f actor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * n otes : 1. z jc (t) = 0.89 o c/w max. 2. d uty f actor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2
5 www.fairchildsemi.com FDB14N30 rev. a FDB14N30 300v n-channel mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
6 www.fairchildsemi.com FDB14N30 rev. a FDB14N30 300v n-channel mosfet peak diode recovery dv/dt test circuit & waveforms
7 www.fairchildsemi.com FDB14N30 rev. a FDB14N30 300v n-channel mosfet mechanical dimensions d2-pak
? 2007 fairchild semiconductor corporation www.fairchildsemi.com trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intend ed to be an exhaustive list of all such trademarks. acex ? across the board. around the world. ? activearray ? bottomless ? build it now ? coolfet ? crossvolt ? ctl? current transfer logic? dome ? e 2 cmos ? ecospark ? ensigna ? fact quiet series? fact ? fast ? fastr ? fps ? frfet ? globaloptoisolator ? gto ? hisec ? i-lo ? implieddisconnect ? intellimax ? isoplanar ? microcoupler ? micropak ? microwire ? msx ? msxpro ? ocx ? ocxpro ? optologic ? optoplanar ? pacman ? pop ? power220 ? power247 ? poweredge ? powersaver ? powertrench ? programmable active droop ? qfet ? qs ? qt optoelectronics ? quiet series ? rapidconfigure ? rapidconnect ? scalarpump ? smart start ? spm ? stealth? superfet ? supersot ? -3 supersot ? -6 supersot ? -8 syncfet? tcm ? the power franchise ? ? tinyboost ? tinybuck ? tinylogic ? tinyopto ? tinypower ? tinywire ? trutranslation ? serdes ? uhc ? unifet ? vcx ? wire ? disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fai rchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these spec ifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically th e warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this dat asheet contains the design specifications for product development. specifications may c hange in any manner without notice. preliminary first production this datasheet contains preliminar y data; supplementary data will be published at a later date. fairchild se miconductor reserves the right to make changes at any time wit hout notice to improve design. no identification needed full production this datasheet cont ains final specifications . fairchild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet cont ains specifications on a product that has been discontinued by fairchild semiconducto r. the datasheet is printed for reference information only. rev. i24
|
