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| geometry process details principal device types 2n3054a cjd41c tip41c gross die per 4 inch wafer 1,450 process cp211 power transistor npn - amp/switch transistor chip process epitaxial planar die size 80 x 99 mils die thickness 12.5 mils base bonding pad area 12 x 32 mils emitter bonding pad area 13 x 48 mils top side metalization al - 30,000? back side metalization cr/ni/ag - 16,000? www.centralsemi.com r5 (22-march 2010)
process cp211 typical electrical characteristics www.centralsemi.com r5 (22-march 2010) |
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