ace 63 4 2 0 v complementary enhancement mode field effect transistor ver 1. 2 1 d escription the ACE634 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. features ? n - channel v ds (v)= 2 0v i d = 4 a r ds(on) <35m (v gs = 4.5 v) <4 2 m (v gs = 2.5 v) ? p - channel v ds (v)= - 2 0v i d = - 2 . 5a r ds(on) < 85 m (v gs = - 4.5 v) < 115 m (v gs = - 2 .5v) absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit n - channel p - channel drain - source voltage v ds s 2 0 - 2 0 v gate - source voltage v gs s 12 12 v continuous drain current (t j =150 ) *ac t a =25 i d 4 - 2.5 a t a = 70 3.2 - 2 drain current (pulse) * b i dm 13 - 13 a power dissipation t a =25 p d 1.1 1.1 w t a =70 0.7 0.7 operating junction temperature t j - 55 to 150 o c storage tem perature range t stg - 55 to 150 o c
ace 63 4 2 0 v complementary enhancement mode field effect transistor ver 1.2 2 packaging type s o t - 2 3 - 6 ordering i nformation ace 63 4 xx + h electrical characteristics (n - channel) (t a =25 unless otherwise noted) parameter symbol conditions min. typ. max. unit static drain - source breakdown voltage v (br)dss v gs =0v, i d =250ua 2 0 v drain - source on resistance r ds(on) v gs = 4.5 v, i d = 3 .5 a 2 9 3 5 m v gs = 2 . 5v, i d = 2 . 5 a 3 5 4 2 v gs = 1 . 8 v, i d = 2 a 6 2 7 5 gate threshold vol tage v gs(th) v ds =v gs , i d =250ua 0 . 6 0 . 7 5 1 v gate leakage current i gss v ds =0v, v gs = 1 2 v 100 na zero gate voltage drain current i dss v ds = 2 0 v, v gs =0v 1 ua forward transconductance g fs v ds = 5v, i d = 3 a 1 6 s diode forward voltage v sd i s d = 1 .7 a, v gs =0v 0.7 4 1.0 v maximum body - diode continuous current i s 1 . 7 a switching total gate charge q g v ds = 1 0v, v gs = 4 .5 v, i d = 4 a 6 . 3 8 . 1 nc gate - source charge q gs 1 . 7 2 . 2 gate - drain charge q gd 1 . 4 1 . 8 g m : s o t - 2 3 - 6 pb - free halogen - free
ace 63 4 2 0 v complementary enhancement mode field effect transistor ver 1.2 3 turn - on delay time t d(on) v gs = 4.5v, v ds = 1 0v, i d = 1 a, r g = 6 1 0 . 4 2 0 . 8 ns turn - o n rise time t r 4 . 4 8 . 8 turn - o ff delay time t d(off) 2 7 . 4 5 4 . 8 turn - o ff rise time t f 4 . 2 8 . 4 dynamic input capacitance ciss v gs =0v, v ds = 8 v, f=1mhz 5 2 2 . 3 pf output capacitance coss 9 8 . 5 reverse transfer capacitance crss 7 4 . 7 note: a: the value of r ja is measured with the device mounted on 1in2 fr - 4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific boa rd design. b: repetitive rating, pulse width limited by junction temperature. c: the current rating is based on the t 10s junction to ambient thermal resistance rating. typical c haracteristics (n - channel)
ace 63 4 2 0 v complementary enhancement mode field effect transistor ver 1.2 4
ace 63 4 2 0 v complementary enhancement mode field effect transistor ver 1.2 5 electrical characteristics (p - channel) (t a =25 unless otherwise noted) parameter symbol conditions min. typ. max. unit static drain - source breakdown voltage v (br)dss v gs =0v, i d =250ua - 2 0 v drain - source on resistance r ds(on) v gs = - 4 . 5 v, i d = - 2 . 8 a 7 7 8 5 m v gs = - 2 . 5 v, i d = - 2 a 9 2 1 1 5 v gs = - 1 . 8 v, i d = - 2 a 1 1 8 2 0 0 gate threshold voltage v gs(th) v ds =v gs , i d = - 250ua - 0 . 5 - 0 . 6 - 1 v gate leakage current i gss v ds =0v, v gs = 1 2 v 100 na zero gate voltage drain current i dss v ds = - 2 0 v, v gs =0v - 1 ua forward transconductance g fs v ds = - 5 v, i d = - 2 .5 v 1 3 s diode forward voltage v sd i s d = - 1 .6 a, v gs =0v - 0. 8 1 - 1.0 v maximum body - diode continuous current i s - 1 . 6 a switching total gate charge q g v ds = - 6 v, v gs = - 4 . 5 v, i d = - 2 .8 a 6.6 8.6 n c gate - source charge q gs 0.3 0.4 gate - drain charge q gd 1.3 1.7 turn - on delay time t d(on) v d d = - 6 v, r g = 6 , r l = 6 , v gen = - 4.5v , i d = - 1 a , 9 . 7 1 9 . 4 ns turn - o n rise time t r 3 . 6 7 . 1 turn - o ff delay time t d(off) 3 3 . 3 6 6 . 6 turn - o ff rise time t f 4 . 5 9 dynamic input capacitance ciss v gs =0v, v ds = - 6 v, f=1mhz 5 8 9 pf
ace 63 4 2 0 v complementary enhancement mode field effect transistor ver 1.2 6 output capacitance coss 9 1 . 2 reverse transfer capacitance crss 6 7 . 2 note: a: the value of r ja is measured with the device mounted on 1in2 fr - 4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b: repetitive rating , pulse width limited by junction temperature. c: the current rating is based on the t 10s junction to ambient thermal resistance rating. typical c haracteristics ( p - channel)
ace 63 4 2 0 v complementary enhancement mode field effect transistor ver 1.2 7
ace 63 4 2 0 v complementary enhancement mode field effect transistor ver 1.2 8 packing information s o t - 2 3 - 6
ace 63 4 2 0 v complementary enhancement mode field effect transistor ver 1.2 9 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written appro val of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to pe rform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to p erform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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