STN4488L n channel enhancement mode mosfet 20.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN4488L 2009. v1 description STN4488L is the nchannel logic enhancement mode po wer field effect transistors which are produced using high cell density dmos tre nch technology. it is suitable for the power management applications in the portable o r battery powered system. pin configuration sop-8 part marking sop-8 y:year code a: week code m: process code feature 30v/20a, r ds(on) = 3.8m (typ.) @vgs = 10v 30v/18a, r ds(on) = 5.2m @vgs = 4.5v super high density cell design for extremely low r ds(on) exceptional onresistance and maximum dc current capability sop8 package design
STN4488L n channel enhancement mode mosfet 20.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN4488L 2009. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol 10 sec steady state unit drainsource voltage v dss 30 v gatesource voltage v gss 20 v continuous drain current (tj=150 ) t a =25 t a =70 i d 20 15 a 17 12 pulsed drain current i dm 80 a cont inuous source current (diode conduction) i s 3.0 a power dissipation t a =25 t a =70 p d 3.1 1.7 w 20 1.1 operation junction temperature t j 55/150 storgae temperature range t stg 55/150 thermal resistancejunction to ambient r ja typ max /w 59 75
STN4488L n channel enhancement mode mosfet 20.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN4488L 2009. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain source breakdown voltage v (br)dss v gs =0v,i d =250ua 30 v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 1.0 2.5 v gate leakage current i gss v ds =0v,v gs = 20v 10 na zero gate voltage drain current i dss v ds =30v,v gs =0v 1 ua t j =55 5 onstate drain current i d(on) v ds =5 v,v gs =10v 80 a drainsource onresistance r ds(on) v gs = 10v, i d =20a 3.8 4.6 m t j =125c 5.3 6.5 v gs = 4.5v, i d =18a 5.2 6.4 forward tran conductance g fs v ds =10v,i d =20a 72 s diode forward voltage v sd i s =8.0a,v gs =0v 1.0 v dynamic total gate charge q g v ds =15v,v gs =10v i d =20a 84 112 nc gatesource charge q gs 12 gate drain charge q gd 21 input capacitance ciss v ds =15v,v gs =0v f=1mhz 5450 6800 pf output capacitance coss 760 reverse transfer c apacitance crss 540 turnon time t d(on) v ds =15v,r l =0.75 i d =1a,v g =10v r g =3.0 13 ns tr 9.8 turnoff time t d(off) 49 tf 16
STN4488L n channel enhancement mode mosfet 20.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN4488L 2009. v1 typical characterictics
STN4488L n channel enhancement mode mosfet 20.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN4488L 2009. v1 typical characterictics
STN4488L n channel enhancement mode mosfet 20.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN4488L 2009. v1
STN4488L n channel enhancement mode mosfet 20.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN4488L 2009. v1 sop-8 package outline
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