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| inchange semiconductor product specification silicon npn power transistors BD135 bd137 bd139 description ? ? with to-126 package ? high current ? complement to type bd136/138/140 applications ? driver stages in high-fidelity amplifiers and television circuits pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit BD135 45 bd137 60 v cbo collector-base voltage bd139 open emitter 100 v BD135 45 bd137 60 v ceo collector-emitter voltage bd139 open base 100 v v ebo emitter -base voltage open collector 5 v i c collector current (dc) 1.5 a i cm collector current-peak 2 a i bm base current-peak 1 a p t total power dissipation t mb ?70 ?? 8 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? t amb operating ambient te mperature -65~150 ?? thermal characteristics symbol parameter value unit r th j-a thermal resistance from junction to ambient 100 k/w r th j-mb thermal resistance from junction to mounting base 10 k/w
inchange semiconductor product specification 2 silicon npn power transistors BD135 bd137 bd139 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =0.5a; i b =50ma 0.5 v v be base-emitter voltage i c =500ma ; v ce =2v 1.0 v v cb =30v; i e =0 100 na i cbo collector cut-off current v cb =30v; i e =0 t j =125 ?? 10 | a i ebo emitter cut-off current v eb =5v; i c =0 100 na h fe-1 dc current gain i c =5ma ; v ce =2v 40 h fe-2 dc current gain BD135-10;bd137-10;bd139-10 BD135-16;bd137-16;bd139-16 i c =150ma ; v ce =2v 63 63 100 250 160 250 h fe-3 dc current gain i c =500ma ; v ce =2v 25 f t transition frequency i c =50ma; v ce =5v ;f=100mhz 190 mhz inchange semiconductor product specification 3 silicon npn power transistors BD135 bd137 bd139 package outline fig.2 outline dimensions |
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