SI9934DY vishay siliconix document number: 70163 s-49532erev. e, 02-feb-98 www.vishay.com faxback 408-970-5600 1 dual p-channel 2.5-v (g-s) mosfet
v ds (v) r ds(on) ( ) i d (a) 12 0.05 @ v gs = 4.5 v 5 12 0.074 @ v gs = 2.5 v 4.1 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top view 2 3 4 1 s 1 g 1 d 1 d 1 p-channel mosfet s 2 g 2 d 2 d 2 p-channel mosfet
parameter symbol limit unit drain-source voltage v ds 12 v gate-source voltage v gs 8 v continuous drain current (t j = 150 c) a t a = 25 c i d 5 a continuous drain current (t j = 150 c) a t a = 70 c i d 4.0 a pulsed drain current i dm 20 a continuous source current (diode conduction) a i s 1.7 maximum power dissipation a t a = 25 c p d 2.0 w maximum power dissipation a t a = 70 c p d 1.3 w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol limit unit maximum junction-to-ambient a r thja 62.5 c/w notes a. surface mounted on fr4 board, t 10 sec. for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm
SI9934DY vishay siliconix www.vishay.com faxback 408-970-5600 2 document number: 70163 s-49532erev. e, 02-feb-98
parameter symbol test condition min typ a max unit static0.6 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = 12 v, v gs = 0 v 1 a zero gate v oltage drain current i dss v ds = 12 v, v gs = 0 v, t j = 55 c 5 a on - state drain current b i d(on) v ds 5 v, v gs = 4.5 v 20 a on - state drain current b i d(on) v ds 5 v, v gs = 2.5 v 6 a drain - source on - state resistance b r ds(on) v gs = 4.5 v, i d = 5 a 0.039 0.05 drain - source on - state resistance b r ds(on) v gs = 2.5 v, i d = 3 a 0.051 0.074 forward transconductance b g fs v ds = 9 v, i d = 5 a 16 s diode forward voltage b v sd i s = 1.7 a, v gs = 0 v 0.75 1.2 v dynamic a total gate charge q g v6vv45vi5a 21 40 c gate-source charge q gs v ds = 6 v, v gs = 4.5 v, i d = 5 a 3 nc gate-drain charge q gd 6 turn-on delay time t d(on) v6vr6 20 40 rise time t r v dd = 6 v, r l = 6 i1av 45vr6 40 80 turn-off delay time t d(off) dd , l i d 1 a, v gen = 4.5 v, r g = 6 100 200 ns fall time t f 60 120 source-drain reverse recovery time t rr i f = 1.7 a, di/dt = 100 a/ s 67 100 notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%.
SI9934DY vishay siliconix document number: 70163 s-49532erev. e, 02-feb-98 www.vishay.com faxback 408-970-5600 3
output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs on-resistance ( r ds(on) w ) i d drain current (a) capacitance on-resistance vs. junction temperature t j junction temperature ( c) (normalized) on-resistance ( r ds(on) w ) 0 4 8 12 16 20 012345 0 1 2 3 4 5 0 5 10 15 20 25 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 0 50 100 150 0 0.02 0.04 0.06 0.08 0.10 0 5 10 15 20 0 500 1000 1500 2000 2500 3000 024681012 0 5 10 15 20 0 0.5 1.0 1.5 2.0 2.5 3.0 55 c v gs = 2.5 v c rss c oss c iss v gs = 4.5 v t c = 125 c v ds = 6 v i d = 5 a v gs = 4.5 v i d = 5 a v gs = 5, 4.5, 4, 3.5, 3 v 1.5 v 2 v 2.5 v 1 v 25 c
SI9934DY vishay siliconix www.vishay.com faxback 408-970-5600 4 document number: 70163 s-49532erev. e, 02-feb-98
source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance on-resistance ( r ds(on) w ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) time (sec) power (w) 0.6 0.4 0.2 0.0 0.2 0.4 0.6 50 0 50 100 150 0 0.02 0.04 0.06 0.08 0.10 02468 t j = 150 c t j = 25 c 2 1 0.1 0.01 i d = 5 a i d = 250 m a 0.4 0.6 10 0.8 1.0 1.2 1.4 1 10 3 10 2 11030 10 1 10 4 1. duty cycle, d = 2. per unit base = r thja = 62.5 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0.01 0 0.1 24 30 6 12 18 11030 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 20 variance (v) v gs(th)
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