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  inchange semiconductor isc product specification isc silicon npn power transistor 2SD2645 description high breakdown voltage- : v cbo = 1500v (min) high switching speed high reliability built-in damper diode applications color tv horizontal deflect ion output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 5 v i c collector current- continuous 10 a i cp collector current-pulse 25 a collector power dissipation @ t a =25 3 p c collector power dissipation @ t c =25 80 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD2645 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0 800 v v ce (sat) collector-emitter saturation voltage i c = 7.2a; i b = 1.44a 3.0 v v be (sat) base-emitter saturation voltage i c = 7.2a; i b = 1.44a 1.5 v i cbo collector cutoff current v cb = 800v; i e = 0 10 a i ces collector cutoff current v ce = 1500v; r be = 0 1.0 ma i ebo emitter cutoff current v eb = 4v; i c = 0 40 130 ma h fe-1 dc current gain i c = 1a; v ce = 5v 15 h fe-2 dc current gain i c = 8a; v ce = 5v 5 8 v ecf c-e diode forward voltage i f = 8a 2.0 v t f fall time i c = 5a, i b1 = 1a; i b2 = -2a 0.3 s isc website www.iscsemi.cn 2


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