? 2010 ixys corporation, all rights reserved ds100271(06/10) v dss = 500v i d25 = 24a r ds(on) 270 m t rr(typ) 200 ns n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c, r gs = 1m 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c24a i dm t c = 25 c, pulse width limited by t jm 50 a i a t c = 25 c12a e as t c = 25 c 750 mj dv/dt i s i dm , v dd v dss ,t j 150 c 15 v/ns p d t c = 25 c 480 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 5.5 g IXFQ24N50P2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 1ma 2.5 4.5 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 25 a t j = 125 c 1 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 270 m polarp2 tm hiperfet tm power mosfet features z avalanche rated z fast intrinsic diode z dynamic dv/dt rated z low package inductance advantages z high power density z easy to mount z space savings applications z switch-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls advance technical information g = gate d = drain s = source tab = drain to-3p d g s tab
ixys reserves the right to change limits, test conditions, and dimensions. IXFQ24N50P2 symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 14 24 s c iss 2890 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 280 pf c rss 22 pf t d(on) 15 ns t r 9 ns t d(off) 30 ns t f 5 ns q g(on) 48 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 13 nc q gd 16 nc r thjc 0.26 c/w r thcs 0.25 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 24 a i sm repetitive, pulse width limited by t jm 96 a v sd i f = i s , v gs = 0v, note 1 1.3 v t rr 200 ns i rm 10 a q rm 0.69 c ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 10 (external) i f = 12a, -di/dt = 100a/ s v r = 100v, v gs = 0v advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. to-3p (ixfq) outline
? 2010 ixys corporation, all rights reserved fig. 1. output characteristics @ t j = 25oc 0 5 10 15 20 25 012345678 v ds - volts i d - amperes v gs = 10v 7v 5 v 6 v fig. 2. extended output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 7v 6 v 5 v fig. 3. output characteristics @ t j = 125oc 0 5 10 15 20 25 0 5 10 15 20 v ds - volts i d - amperes v gs = 10v 7v 5 v 4v 6v fig. 4. r ds(on) normalized to i d = 12a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 24a i d = 12a fig. 5. r ds(on) normalized to i d = 12a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 0 5 10 15 20 25 30 35 40 45 50 55 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 4 8 12 16 20 24 28 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes IXFQ24N50P2
ixys reserves the right to change limits, test conditions, and dimensions. IXFQ24N50P2 fig. 7. input admittance 0 5 10 15 20 25 30 35 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 0 5 10 15 20 25 30 35 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 80 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 50 q g - nanocoulombs v gs - volts v ds = 250v i d = 12a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.01 0.1 1 10 100 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms
? 2010 ixys corporation, all rights reserved ixys ref: f_24n50p2(57-n45)6-03-10-a IXFQ24N50P2 fig. 13. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w
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