mitsubishi PM200CBS060 flat-base type insulated package sep. 2001 mitsubishi PM200CBS060 flat-base type insulated package PM200CBS060 feature a) adopting 4th generation igbt chip, which performance is improved by 1 m fine rule process. for example, typical vce(sat)=1.7v b) using new diode which is designed to get soft reverse recovery characteristics. c) over-temperature protection by detecting t j of the igbt chips ?3 200a, 600v current-sense igbt type inverter ? monolithic gate drive & protection logic ? detection, protection & status indication circuits for over- current, short-circuit, over-temperature & under-voltage ? acoustic noise-less 18.5/22kw class inverter application application servo drives and other motor controls package outlines dimensions in mm terminal code 1. vwpc 2. wp 3. vwp1 4. vvpc 5. vp 6. vvp1 7. vupc 8. up 9. vup1 10. vnc 11. vn1 12. wn 13. vn 14. un 15. fo label 4 5 9 6 30 10 9 0.64 10 1 15 19 19 19 19 w v u n p r7 mounting holes 4- 5.5 1.5 71 0.3 7 85 4 23.79 120 106 0.3 7 10.16 10.16 10.16 15- 0.64 14 7 10 15 2.54 0.25 2.54 0.25 2.54 0.25 2.54 0.25 2.54 0.25 2.54 0.25 2.54 0.25 2.54 0.25 2.54 0.25 2.54 0.25 2.54 0.25
mitsubishi PM200CBS060 flat-base type insulated package sep. 2001 v ces i c i cp p c t j collector-emitter voltage collector current collector current (peak) collector dissipation junction temperature v d = 15v, v cin = 15v t c = 25 c t c = 25 c t c = 25 c v a a w c maximum ratings (tj = 25 c, unless otherwise noted) inverter part symbol parameter conditions ratings unit 600 200 400 961 C 20 ~ +150 internal functions block diagram v fo i fo control part v ma v d +0.5 20 supply voltage input voltage fault output supply voltage fault output current symbol parameter conditions ratings unit applied between : v up1 -v upc v vp1 -v vpc , v wp1 -v wpc , v n1 -v nc applied between : u p -v upc , v p -v vpc w p -v wpc , u n ? v n ? w n -v nc applied between : f o -v nc sink current at f o terminal 20 20 v d v cin v v gnd in fo vcc gnd si out ot gnd in fo vcc gnd si out ot gnd in fo vcc gnd si out ot gnd in vcc gnd si out ot gnd in vcc gnd si out ot gnd in vcc gnd si out ot rfo=1.5k ? w p v wp1 v wpc u n fo v p v vp1 v vpc u p v up1 v upc w n v n1 v nc v n rfo nwv p u
mitsubishi PM200CBS060 flat-base type insulated package sep. 2001 parameter symbol supply voltage protected by oc & sc supply voltage (surge) module case operating temperature storage temperature isolation voltage conditions v cc(surge) t c t stg v iso ratings v cc(prot) 400 500 C 20 ~ +110 C 40 ~ +125 2500 unit v c c v rms v v d = 13.5 ~ 16.5v, inverter part, t j = 125 c start applied between : p-n, surge value (note-1) 60hz, sinusoidal charged part to base, ac 1 min. (note-1) tc(under the chip) measurement point is below. total system (unit : mm) x y axis arm u p v p w p u n v n w n igbt 84.5 57.5 fwdi 84.5 45.8 igbt 53.0 57.5 fwdi 53.0 45.8 igbt 21.5 57.5 fwdi 21.5 45.8 igbt 92.9 22.3 fwdi 81.1 22.3 igbt 56.2 22.3 fwdi 44.4 22.3 igbt 13.2 22.3 fwdi 24.9 22.3 2.3 2.3 3.3 2.4 0.3 1.0 3.3 1.0 1 10 min. typ. max. collector-emitter saturation voltage collector-emitter cutoff current C i c = 200a, v d = 15v, v cin = 15v (fig. 2) t j = 25 c t j = 125 c electrical characteristics (tj = 25 c, unless otherwise noted) inverter part parameter symbol test conditions v ce(sat) i ces v ec t on t rr t c(on) t off t c(off) limits 0.8 1.7 1.7 2.2 1.2 0.15 0.4 2.4 0.5 t j = 25 c t j = 125 c fwdi forward voltage switching time v d = 15v, v cin = 15v ? 0v v cc = 300v, i c = 200a t j = 125 c inductive load (fig. 3) v ce = v ces , v d = 15v (fig. 4) v d = 15v, i c = 200a v cin = 0v, pulsed (fig. 1) v ma v s s s s s unit x uvw pn bottom view y c/w c/w c/w r th(j-c )q r th(j-c )f r th(c-f) symbol parameter test conditions unit limits min. typ. max. thermal resistances contact thermal resistance *: if you use this value, r th(f-a) should be measured just under the chips. tc measured point is just under the chips inverter igbt part (per 1/6 module) tc measured point is just under the chips inverter fwdi part (per 1/6 module) case to fin, (per 1 module) thermal grease applied junction to case thermal resistances 0.13* 0.21* 0.025
mitsubishi PM200CBS060 flat-base type insulated package sep. 2001 v d = 15v, v cin = 15v applied between : u p -v upc , v p -v vpc , w p -v wpc u n ? v n ? w n -v nc i d c c v v ma ma ms 60 18 1.8 2.3 810 670 155 12.5 0.01 15 ma circuit current input on threshold voltage input off threshold voltage over current trip level short circuit trip level over current delay time over temperature protection supply circuit under-voltage protection fault output current minimum fault output pulse width v th(on) v th(off) oc sc t off(oc) ot ot r uv uv r i fo(h) i fo(l) t fo trip level reset level trip level reset level control part 1.2 1.7 400 310 135 11.5 1.0 parameter symbol test conditions max. min. typ. unit limits 40 13 1.5 2.0 515 560 10 145 125 12.0 12.5 10 1.8 (note-2) fault output is given only when the internal oc, sc, ot & uv protection. fault output of oc, sc, ot & uv protection operate by lower arm. fault output of oc, sc protection given pulse. fault output of ot, uv protection given pulse while over trip level. detect t j of igbt chip C 20 t j 125 c v d = 15v, v fo = 15v (note-2) v d = 15v (note-2) s 3.5 3.5 main terminal screw : m5 mounting part screw : m5 symbol parameter mounting torque mounting torque weight test conditions unit n ? m n ? m g limits min. typ. max. 2.5 2.5 3.0 3.0 680 mechanical ratings and characteristics v d = 15v (fig. 5,6) C 20 t j 125 c, v d = 15v (fig. 5,6) v d = 15v (fig. 5,6) v n1 -v nc v xp1 -v xpc t j = C 20 c t j = 25 c t j = 125 c a a v v recommended conditions for use recommended value unit test conditions symbol parameter v applied across p-n terminals applied between : v up1 -v upc , v vp1 -v vpc v wp1 -v wpc , v n1 -v nc (note-3) applied between : u p -v upc , v p -v vpc , w p -v wpc u n ? v n ? w n -v nc using application circuit of fig.8 for ipm s each input signals (fig. 7) supply voltage control supply voltage input on voltage input off voltage pwm input frequency arm shoot-through blocking time 400 15.0 1.5 0.8 4.0 20 2.5 v cc v cin(on) v cin(off) f pwm t dead v d v khz s v v (note-3) with ripple satisfying the following conditions dv/dt swing 5v/ s, variation 2v peak to peak
mitsubishi PM200CBS060 flat-base type insulated package sep. 2001 precautions for testing 1. before appling any control supply voltage (v d ), the input terminals should be pulled up by resistores, etc. to their corre- sponding supply voltage and each input signal should be kept off state. after this, the specified on and off level setting for each input signal should be done. 2. when performing oc and sc tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above v ces rating of the device. (these test should not be done by using a curve tracer or its equivalent.) p, (u,v,w) u,v,w, (n) v d (all) in (fo) v cin (0v) ic v a) lower arm switching b) upper arm switching u,v,w, (n) in (fo) v d (all) v p, (u,v,w) v cin (15v) C ic fo p n c s u,v,w vcc ic v d (all) v cin v cin ( 15v ) signal input (upper arm) signal input (lower arm) fig. 1 v ce(sat) test fig. 2 v ec test n c s vcc ic v d (all) p u,v,w v cin v cin ( 15v ) fo signal input (upper arm) signal input (lower arm) 10% 90% trr irr tr td (on) tc (on) tc (off) td (off) v cin ic v ce 10% 10% 10% 90% tf (ton= td (on) + tr) (toff= td (off) + tf) fig. 4 i ces test fig. 3 switching time test circuit and waveform v d (all) u,v,w, (n) p, (u,v,w) a pulse v ce v cin (15v) in (fo) v d (all) u,v,w, (n) p, (u,v,w) v cin v cc i c in (fo) fig. 5 oc and sc test i c i c oc sc v cin t off (oc) short circuit current over current constant current constant current fig. 6 oc and sc test waveform v cinn 0v 0v v cinp t t t dead t dead t dead fig. 7 dead time measurement point example
mitsubishi PM200CBS060 flat-base type insulated package sep. 2001 notes for stable and safe operation ; ? design the pcb pattern to minimize wiring length between opto-coupler and ipm s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. ? connect low impedance capacitor between the vcc and gnd terminal of each fast switching opto-coupler. ? fast switching opto-couplers : t plh , t phl 0.8 s, use high cmr type. ? slow switching opto-coupler : ctr > 100% ? use 4 isolated control power supplies (v d ). also, care should be taken to minimize the instantaneous voltage charge of the power supply. ? make inductance of dc bus line as small as possible, and minimize surge voltage using snubber capacitor between p and n terminal. ? use line noise filter capacitor (ex. 4.7nf) between each input ac line and ground to reject common-mode noise from ac line and improve noise immunity of the system. out ot si gnd gnd in vcc u v w n p m if + C : interface which is the same as the u-phase out si gnd gnd in vcc out si gnd gnd in vcc si gnd gnd in fo vcc out si gnd gnd in fo vcc out si gnd gnd in fo vcc vwp1 wp vwpc un vn vn1 wn vnc rfo fo vvp1 vp vvpc 0.1 1k ? 0.1 0.1 20k ? 20k ? 20k ? 10 10 10 20k ? 10 0.1 vup1 up vupc if if if 5v v d v d v d v d fig. 8 application example circuit ot ot ot out ot ot
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