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| inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1928 description collector-emitter saturation voltage- : v ce(sat) = 1.5v(max) @i c = 4a high dc current gain : h fe = 2000(min) @ i c = 4a applications designed for audio frequency power amplifier and low speed switching industrial use. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 7 v i c collector current-continuous 8 a i cp collector current-pulse 12 a i b b base current-continuous 0.8 a collector power dissipation @ t a =25 2 p c collector power dissipation @ t c =25 25 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1928 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce( sat ) collector-emitter saturation voltage i c = 4a; i b = 4ma b 1.5 v v be( sat ) base-emitter saturation voltage i c = 4a; i b = 4ma b 2.0 v i cbo collector cutoff current v cb = 100v; i e = 0 1.0 a i ebo emitter cutoff current v eb = 5v; i c = 0 3.0 ma h fe -1 dc current gain i c = 4a; v ce = 2v 2000 20000 h fe -2 dc current gain i c = 6a; v ce = 2v 500 switching times t on turn-on time 0.4 s t stg storage time 2.5 s t f fall time i c = 4a, i b1 = -i b2 = 4ma 0.5 s isc website www.iscsemi.cn 2 |
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