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savantic semiconductor product specification silicon pnp power transistors 2SB1007 d escription with to-126 package complement to type 2sd1378 high breakdown voltage applications low frequency power amplification pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -80 v v ceo collector-emitter voltage open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current (dc) -0.7 a t a =25 1.2 p d total power dissipation t c =25 10 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1007 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-2ma ;i b =0 -80 v v (br)cbo collector-base breakdown voltage i c =-50a ;i e =0 -80 v v (br)ebo emitter-base breakdown voltage i e =-50a ;i c =0 -5 v v cesat collector-emitter saturation voltage i c =-0.5a ;i b =-50ma -0.2 -0.4 v i cbo collector cut-off current v cb =-50v; i e =0 -0.5 a i ebo emitter cut-off current v eb =-4v; i c =0 -0.5 a h fe dc current gain i c =-0.1a ; v ce =-3v 82 390 c ob output capacitance i e =0; v cb =-10v;f=1mhz 14 20 pf f t transition frequency i e =50ma ; v ce =-10v 100 mhz h fe classifications p q r 82-180 120-270 180-390
savantic semiconductor product specification 3 silicon pnp power transistors 2SB1007 package outline fig.2 outline dimensions

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