umh 1 5n d i g i t a l t r a n s i s t o r ( n p n + n p n ) fea tures z t w o dtc14 4 t chip s in a p a ckage z t r ansistor element s are indep end ent, eliminating interference z mounting cost and area can be cut in half. external circuit sot - 3 63 marking: h 1 5 absolute maximum ratings(t a=25 ) para mete r symbol limit s unit co llecto r -b ase v o lt ag e v (b r)cb o 50 v co llecto r -emitter v o lt ag e v (b r)ce o 50 v emitter-b a s e v o lt ag e v ( br ) ebo 5 v co llecto r cu rr en t i c 100 ma co llecto r po w e r d i ssip a tio n p c 150 mw j unc tion te m p e r a t ure t j 150 s t o rag e temp eratu r e t s tg -55~ 15 0 electrical charact eristics (t a=2 5 ) pa rame ter sy mbol min. t y p ma x . unit condit i ons co llecto r -b ase b r eakd o w n v o lt ag e v (b r)cb o 50 v i c =5 0 a co llecto r -emitter b r ea kd o w n v o lt ag e v (b r)ce o 50 v i c =1 ma emitter-b a s e b r eakd o w n v o lt ag e v ( br ) ebo 5 v i e =5 0 a co llecto r cu t-o ff cu rren t i cb o 0.5 a v cb = 50v emitter cut-off current i ebo 0.5 a v eb =4 v co llecto r -emitter satu r atio n v o lt ag e v ce (sa t ) 0.3 v i c = 10ma,i b =1 ma dc cu rr en t tra n sfer ratio h fe 100 600 v ce =5 v , i c =1 ma in p u t resist an ce r 1 32.9 47 61.1 k ? t r a n s ition fre que nc y f t 250 mhz v ce = 10v ,i e = - 5 m a,f= 100mhz 1 www.htsemi.com semiconductor jinyu 1 date:2011/ 05
|
