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| product specification www.jmnic.com silicon npn power transistors 2SC1050 description ? with to-3 package ? high breakdown voltage applications ? for use in audio and general purpose applications pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 300 v v ceo collector-emitter voltage open base 300 v v ebo emitter-base voltage open collector 6 v i c collector current 1 a p t total power dissipation t mb =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3) and symbol
product specification www.jmnic.com 2 silicon npn power transistors 2SC1050 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a ; i b =0 300 v v cesat collector-emitter saturation voltage i c =0.5a; i b =0.1a 1.2 v v besat base-emitter saturation voltage i c =0.5a; i b =0.1a 1.5 v i cbo collector cut-off current v cb =300v; i e =0 0.1 ma i ceo collector cut-off current v ce =300v; i b =0 0.5 ma i ebo emitter cut-off current v eb =6v; i c =0 0.1 ma h fe dc current gain i c =0.3a ; v ce =5v 30 200 product specification www.jmnic.com 3 silicon npn power transistors 2SC1050 package outline fig.2 outline dimensions |
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