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zxgd3104n8 document number ds35546 rev. 1 ? 2 1 of 13 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated zxgd3104n8 synchronous mosfet controller in so8 description the zxgd3104 is intended to drive mosfets configured as ideal diode replacements. the device is comp rised of a differential amplifier detector stage and high current driv er. the detector monitors the reverse voltage of the mosfet such that if body diode conduction occurs a positive voltage is applied to the mosfet?s gate pin. once the positive voltage is applied to the gate the mosfet switches on. the detectors? output voltage is then proportional to the mosfet drain-source voltage and this is applied to the gate via the driver. this action provides a rapid mosfet turn off at zero drain current. applications ? flyback converters in: o 90w laptop adaptors features ? 5-25v vcc range ? operating up to 250khz ? suitable for discontinuous mode (dcm), critical conduction mode (crcm) and continuous mode (ccm) operation ? turn-off propagation delay 15ns and turn-off time 20ns. ? proportional gate drive ? detector threshold voltage -10mv ? standby current 5ma ? ?lead-free?, rohs compliant (note 1) ? halogen and antimony free. ?green? device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: so-8 ? case material: molded plasti c. ?green? molding compound. ? ul flammability rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: matte tin finish ? solderable per mil-std-202, method 208 ? weight: 0.074 grams (approximate) ordering information (note 3) product marking reel size (inches) tape width (mm) quantity per reel ZXGD3104N8TC zxgd3104 13 12 2,500 notes: 1. no purposefully added lead 2. diodes inc?s ?green? policy can be found on our website at http://www.diodes.com 3. for packaging details, go to our website at http://www.diodes.com marking information zxgd = product type marking code, line 1 3104 = product type marking code, line 2 yy = year (ex: 11 = 2011) ww = week (01 - 53) zxgd 3104 y y w w top view pin-out drain dnc ref gatel gateh bias gnd v cc so-8 typical configuration
zxgd3104n8 document number ds35546 rev. 1 ? 2 2 of 13 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated zxgd3104n8 functional block diagram pin no. name description and function 1 dnc do not connect leave pin floating. 2 ref reference this pin is connected to v cc via resistor, r ref. select r ref to source 2.16ma into this pin. refer to table 1, in application information section. 3 gatel gate turn off this pin sinks current, i sink , from the synchronous mosfet gate. 4 gateh gate turn on this pin sources current, i source , to the synchronous mosfet gate. 5 v cc power supply this is the supply pin. it is recommended to deco uple this point to ground closely with a ceramic capacitor. 6 gnd ground this is the ground reference point. connect to the synchronous mosfet source terminal. 7 bias bias this pin is connected to v cc via resistor, r bias . select r bias to source 3ma into this pin. refer to table 1, in application information section. 8 drain drain connection this pin connects directly to the synchronous mosfet drain terminal.
zxgd3104n8 document number ds35546 rev. 1 ? 2 3 of 13 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated zxgd3104n8 maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit supply voltage, relative to gnd v cc 25 v drain pin voltage v d -3 to 180 v gate output voltage v g -3 to v cc + 3 v gate driver peak source current i source 2.5 a gate driver peak sink current i sink 7 a reference voltage v ref v cc v reference current i ref 25 ma bias voltage v bias v cc v bias current i bias 100 ma thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation linear derating factor (note 4) p d 490 3.92 mw mw/ c (note 5) 655 5.24 (note 6) 720 5.76 (note 7) 785 6.28 thermal resistance, junction to ambient (note 4) r ja 255 c/w (note 5) 191 (note 6) 173 (note 7) 159 thermal resistance, junction to lead (note 8) r jl 135 c/w operating temperature range t j -40 to +150 c storage temperature range t stg -50 to +150 notes: 4. for a device surface mounted on minimum recommended pad layout fr4 pcb with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 5. same as note (4), except pin 5 (v cc ) and pin 6 (gnd) are both connected to separate 5mm x 5mm 1oz copper heatsinks. 6. same as note (5), except both heatsinks are 10mm x 10mm. 7. same as note (5), except both heatsinks are 15mm x 15mm. 8. thermal resistance from junction to solder-point at the end of each lead on pin 5 (v cc ) and pin 6 (gnd).
zxgd3104n8 document number ds35546 rev. 1 ? 2 4 of 13 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated zxgd3104n8 thermal derating curve 0 20 40 60 80 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 15mm x 15mm 5mm x 5mm minimum layout derating curve junction temperature (c) max power dissipation (w) 10mm x 10mm esd rating characteristic value unit esd for human body model 2000 v esd for machine model 300
zxgd3104n8 document number ds35546 rev. 1 ? 2 5 of 13 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated zxgd3104n8 electrical characteristics @t a = 25c unless otherwise specified v cc = 19v; r bias = 6.3k ? ; r ref = 8.5k ? characteristic symbol min typ max unit test condition input and supply quiescent current i q - 5.16 - ma v d 0v gate driver turn-off threshold voltage (note 9 & 10) v t -16 -10 0 mv v g = 1v gate output voltage (note 9 & 10) v g ( off ) 0 0.73 1.0 v v d 1v (note 9 & 11) v g 12.5 14 v cc v d = -50mv 17 18 v cc v d = -100mv switching performance for q g (tot) = 124nc (note 12) turn-on propagation delay t d ( rise ) 175 250 325 ns - refer to switching waveforms in fig. 1 turn-off propagation delay t d ( fall ) 11 15 20 gate rise time t r 335 480 625 from 10% of v g to 10v 530 760 990 from 10% to 90% of v g gate fall time t f 35 50 65 continuous conduction mode notes: 9.gateh connected to gatel 10.r h = 100k ? , r l = o/c 11.r l = 100k ? , r h = o/c 12. refer to test circuit below
zxgd3104n8 document number ds35546 rev. 1 ? 2 6 of 13 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated zxgd3104n8 descriptions of the normal operation the operation of the controller is described step-by-step with reference to the timing diagram in figure 1. 1. the controller monitors the mosfet drain-source voltage. 2. when, due to transformer action, the mosfet body diode is forced to conduct there is approximately -0.8v on the drain pin. 3. the detector outputs a positive voltage with respect to ground, this voltage is then fed to the mosfet driver stage and current is sourced out of the gate pin. 4. the controller goes into proportional gate drive contro l ? the gate output voltage is proportional to the on- resistance-induced drain-source volt age drop across the mosfet. proportional gate drive ensures that mosfet conducts for majority of the conduction cy cle and minimizes body diode conduction time. 5. as the drain current decays linearly toward zero, prop ortional gate drive control reduces the gate voltage so the mosfet can be turned off rapidly at zero current crossi ng. the gate voltage is removed when the drain-source voltage crosses the detection threshold voltage to minimize reverse current flow. 6. at zero drain current, the controlle r gate output voltage is pulled low to v g(off) to ensure that the mosfet is off. figure 1. timing diagram for a critical conduction mode flyback converter
zxgd3104n8 document number ds35546 rev. 1 ? 2 7 of 13 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated zxgd3104n8 typical electrical characteristics @t a = 25c unless otherwise specified
zxgd3104n8 document number ds35546 rev. 1 ? 2 8 of 13 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated zxgd3104n8 continued - typical el ectrical characteristics @t a = 25c unless otherwise specified
zxgd3104n8 document number ds35546 rev. 1 ? 2 9 of 13 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated zxgd3104n8 application information the purpose of the zxgd3104 is to drive a mosfet as a low-v f schottky diode replacement in offline power converters. when combined with a low r ds(on) mosfet, it can yield significant power efficiency improvement, whilst maintaining design simplicity and incurring minimal com ponent count. figure 2 shows typical configuration of zxgd3104 for synchronous rectificati on in a 19v output flyback adaptor. figure 2. example connections in flyback power supply figure 3 shows operating waveforms fo r zxgd3104 driving a mosfet with q g(tot) = 124nc in a 19v output flyback converter operating in critical conduction mode.
zxgd3104n8 document number ds35546 rev. 1 ? 2 10 of 13 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated zxgd3104n8 typical waveforms fig 3a: critical conduction mode , operating for mosfet with q g(tot) =124nc fig 3b: typical sw itching waveform fig 3c: close up of typi cal turn off waveform
zxgd3104n8 document number ds35546 rev. 1 ? 2 11 of 13 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated zxgd3104n8 design considerations it is advisable to decouple the zxgd3104 closely to v cc and ground due to the possibility of high peak gate currents with a 1 f x7r type ceramic capacitor c1 as shown in figure 2. also the ground return loop should be as short as possible. to minimize parasitic inductance-induced premature turn -off of the synchronous controller always keep the pcb track length between zxgd3104?s drain i nput and mosfet?s drain to less than 10mm. low internal inductance smd mosfet packages are also recommended for high switching frequency power conversion to minimize mosfet body diode conduction loss. the gate pins should be as close to the mosfet?s gate as possible. external gate re sistors are optional. they can be inserted to control the rise and fall time which may help with emi issues. the careful selection of external resistors r ref and r bias is important to the optimum device operation. select a value for resistor r ref and r bias from table 1 based on the desired vcc value. this provides the typical zxgd3104?s detection threshold voltage of -10mv. table 1. recommended resistor values for various supply voltages v cc r bias r ref 5v 1.6 k? 2 k ? 10v 3.3 k? 4.3 k? 12v 3.9 k? 5.1 k? 15v 5.1 k? 6.8 k? 19v 6.3 k? 8.5 k?
zxgd3104n8 document number ds35546 rev. 1 ? 2 12 of 13 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated zxgd3104n8 package outline dimensions dim inches millimeters dim inches millimeters min. max. min. max. min. max. min. max. a 0.053 0.069 1.35 1.75 e 0.050 bsc 1.27 bsc a1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 d 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 h 0.228 0.244 5.80 6.20 0 8 0 8 e 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 l 0.016 0.050 0.40 1.27 - - - - - suggested pad layout hx45 1.52 0.060 7.0 0.275 0.6 0 .024 1.27 0.050 4.0 0.155 mm inches
zxgd3104n8 document number ds35546 rev. 1 ? 2 13 of 13 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated zxgd3104n8 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2011, diodes incorporated www.diodes.com

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