ipd64cn10n g ipu64cn10n g opti mos ? 2 power-transistor features ? n-channel, normal level ? excellent gate charge x r ds(on) product (fom) ? very low on-resistance r ds(on) ? 175 c operating temperature ? pb-free lead plating; rohs compliant ? qualified according to jedec 1) for target application ? ideal for high-frequency switching and synchronous rectification maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c 17 a t c =100 c 13 pulsed drain current 2) i d,pulse t c =25 c 68 avalanche energy, single pulse e as i d =17 a, r gs =25 ? 34 mj reverse diode d v /d t d v /d t i d =17 a, v ds =80 v, d i /d t =100 a/s, t j,max =175 c 6 kv/s gate source voltage 3) v gs 20 v power dissipation p tot t c =25 c 44 w operating and storage temperature t j , t stg -55 ... 175 c iec climatic category; din iec 68-1 55/175/56 3) t jmax =150c and duty cycle d =0.01 for v gs <-5v value 1) j-std20 and jesd22 2) see figure 3 v ds 100 v r ds(on),max 64 m ? i d 17 a product summary type ipd64cn10n g ipu64cn10n g package pg-to252-3 pg-to251-3 marking 64cn10n 64cn10n rev. 1.01 page 1 2006-02-21 www..net
ipd64cn10n g ipu64cn10n g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 3.4 k/w minimal footprint - - 75 6 cm2 cooling area 4) --50 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 100 - - v gate threshold voltage v gs(th) v ds = v gs , i d =20 a 234 zero gate voltage drain current i dss v ds =80 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =80 v, v gs =0 v, t j =125 c - 10 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 1 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =17 a -4564 m ? gate resistance r g - 1.6 - ? transconductance g fs | v ds |>2| i d | r ds(on)max , i d =17 a 815 -s values 4) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. thermal resistance, junction - ambient (to252) rev. 1.01 page 2 2006-02-21
ipd64cn10n g ipu64cn10n g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 428 569 pf output capacitance c oss - 132 176 reverse transfer capacitance c rss -610 turn-on delay time t d(on) - 7 11 ns rise time t r -34 turn-off delay time t d(off) -914 fall time t f -24 gate char g e characteristics 5) gate to source charge q gs -34nc gate to drain charge q gd -23 switching charge q sw -34 gate charge total q g -69 gate plateau voltage v plateau - 6.3 - v output charge q oss v dd =50 v, v gs =0 v -1318nc reverse diode diode continous forward current i s - - 17 a diode pulse current i s,pulse --68 diode forward voltage v sd v gs =0 v, i f =17 a, t j =25 c - 1 1.2 v reverse recovery time t rr -70 ns reverse recovery charge q rr - 120 - nc 5) see figure 16 for gate charge parameter definition v r =50 v, i f = i s , d i f /d t =100 a/s t c =25 c values v gs =0 v, v ds =50 v, f =1 mhz v dd =50 v, v gs =10 v, i d =17 a, r g =1.6 ? v dd =50 v, i d =17 a, v gs =0 to 10 v rev. 1.01 page 3 2006-02-21
ipd64cn10n g ipu64cn10n g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 1 10 0 10 -1 t p [s] z thjc [k/w] 0 10 20 30 40 50 0 50 100 150 200 t c [c] p tot [w] 0 5 10 15 20 0 50 100 150 200 t c [c] i d [a] 1 s 10 s 100 s 1 ms 10 ms dc 10 3 10 2 10 1 10 0 10 -1 10 2 10 1 10 0 10 -1 v ds [v] i d [a] rev. 1.01 page 4 2006-02-21
ipd64cn10n g ipu64cn10n g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 5 v 5.5 v 6 v 7 v 8 v 10 v 0 20 40 60 80 100 120 140 0204060 i d [a] r ds(on) [m ? ] 25 c 175 c 0 10 20 30 40 50 02468 v gs [v] i d [a] 0 10 20 30 0 1020304050 i d [a] g fs [s] 4.5 v 5 v 5.5 v 6 v 6.5 v 7 v 8 v 10 v 0 10 20 30 40 50 012345 v ds [v] i d [a] rev. 1.01 page 5 2006-02-21
ipd64cn10n g ipu64cn10n g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =17 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 50 100 150 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] 20 a 200 a 0 0.5 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 4 10 3 10 2 10 1 10 0 0 20406080 v ds [v] c [pf] 25 c 175 c 25 c, 98% 175 c, 98% 0.1 1 10 100 0 0.5 1 1.5 2 v sd [v] i f [a] rev. 1.01 page 6 2006-02-21
ipd64cn10n g ipu64cn10n g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =17 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 20 v 50 v 80 v 0 2 4 6 8 10 12 02468 q gate [nc] v gs [v] 90 95 100 105 110 115 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 150 c 1 10 100 1 10 100 1000 t av [s] i as [a] rev. 1.01 page 7 2006-02-21
ipd64cn10n g ipu64cn10n g pg-to252-3: outline rev. 1.01 page 8 2006-02-21
ipd64cn10n g ipu64cn10n g pg-to251-3: outline rev. 1.01 page 9 2006-02-21
ipd64cn10n g ipu64cn10n g published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2006. a ll rights reserved. a ttention please! the information given in this data sheet shall in no event be r egarded as a guarantee of conditions o characteristics (beschaffenheitsgarantie). with respect to an y examples or hints given herein, any typical value s stated herein and/or any information regarding the application of the device, infineon technologies hereb y disclaims any and all warranties and liabilities of any kind, i ncluding without limitation warranties o non-infringement of intellectual property rights of any third p arty information for further information on technology, delivery terms and condi tions and prices please contact your neares infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types i n question please contact your nearest infineon technologies offi ce . infineon technologies components may only be used in life-suppo rt devices or systems with the express writte n approval of infineon technologies, if a failure of such compone nts can reasonably be expected to cause the failur e of that life-support device or system, or to affect the safety or effectiveness of that device or system. life suppor t devices or systems are intended to be implanted in the human bo dy, or to support and/or maintain and sustai n and/or protect human life. if they fail, it is reasonable to as sume that the health of the user or other persons ma y be endangered. rev. 1.01 page 10 2006-02-21
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