2N5783 pnp 2n5786 npn complementary silicon power transistors description: the central semiconductor 2N5783 and 2n5786 types are complementary silicon power transistors designed for general purpose switching and amplifier applications. marking: full part number maximum ratings: (t c =25c) symbol units collector-base voltage v cbo 45 v collector-emitter voltage v cer 45 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 3.5 v continuous collector current i c 3.5 a continuous base current i b 1.0 a power dissipation p d 10 w power dissipation (t a =25c) p d 1.0 w operating and storage junction temperature t j , t stg -65 to +200 c thermal resistance jc 17.5 c/w thermal resistance ja 175 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min max units i cev v ce =45v, v be =1.5v 10 a i cev v ce =45v, v be =1.5v, t c =150c 1.0 ma i cer v ce =40v, r be =100 10 a i cer v ce =40v, r be =100, t c =150c 1.0 ma i ceo v ce =25v 100 a i ebo v eb =3.5v 10 a bv cer i c =10ma, r be =100 45 v bv ceo i c =10ma 40 v v ce(sat) i c =1.6a, i b =160ma 1.0 v v ce(sat) i c =3.2a, i b =800ma 2.0 v v be(on) v ce =2.0v, i c =1.6a 1.5 v h fe v ce =2.0v, i c =1.6a 20 150 h fe v ce =2.0v, i c =3.2a 4.0 f t v ce =2.0v, i c =100ma, f=4.0mhz (2N5783) 8.0 60 mhz f t v ce =2.0v, i c =100ma, f=200khz (2n5786) 1.0 4.0 mhz h fe v ce =2.0v, i c =100ma, f=1.0khz 25 t on v cc =30v, i c =1.0a, i b1 =i b2 =100ma (2N5783) 0.5 s t on v cc =30v, i c =1.0a, i b1 =i b2 =100ma (2n5786) 5.0 s t off v cc =30v, i c =1.0a, i b1 =i b2 =100ma (2N5783) 2.5 s t off v cc =30v, i c =1.0a, i b1 =i b2 =100ma (2n5786) 15 s to-39 case r1 (21-september 2011) www.centralsemi.com
2N5783 pnp 2n5786 npn complementary silicon power transistors to-39 case - mechanical outline lead code: 1) emitter 2) base 3) collector marking: full part number www.centralsemi.com r1 (21-september 2011)
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