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16 me 16 me 16 me 16 me 16 me g fpm dram g fpm dram g fpm dram g fpm dram g fpm dram AS4C4M4 austin semiconductor, inc. austin semiconductor, inc. reserves the right to change products or specifications without notice. 1 AS4C4M4 rev. 1.0 5/03 4m x 4 cmos dram with fast page mode, 5 volt available as military specifications ? mil-std-883 features ? fast page mode operation ? cas\-before-ras\ refresh capability ? ras\-only and hidden refresh capability ? self-refresh capability ? fast parallel test mode capability ? ttl compatible inputs and outputs ? early write or output enable controlled write ? jedec standard pinout ? single +5v (10%) power supply options markings ? timing 60ns access -6 70ns access -7 ? package plastic tsop, 24-pin dg ? operating temperature ranges military (-55 o c to +125 o c) xt industrial (-40 o c to +85 o c) it general description the austin semiconductor, inc. AS4C4M4dg is a 4,194,304 x 4 bit fast page mode cmos dram offering high speed random access of memory cells within the same row. this device features a +5v (10%) power supply, refresh cycle (2k), and fast access times (60 and 70ns). other features include cas\-before-ras\, ras\-only refresh, and hidden refresh capabilities. this 4m x 4 fast page mode dram is fabricated using an advanced cmos process to realize high bandwidth, low power consumption and high reliability. it may be used as main memory for high level computers, microcomputers and personal computers. pin assignment (top view) 24 pin tsop (dg) 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 vss dq3 dq2 cas\ oe\ a9 a8 a7 a6 a5 a4 vss vcc dq0 dq1 w\ ras\ nc a10 a0 a1 a2 a3 vcc pin function a0 - a10 address inputs dq0 -dq3 data in/out v ss ground ras\ row address strobe cas\ column address strobe w\ read/write input oe\ data output enable v cc power (+5v) nc no connect pin assignment for more products and information please visit our web site at www.austinsemiconductor.com performance range speed t rac t cac t rc t pc units -6 60 15 110 40 ns -7 70 18 130 45 ns
16 me 16 me 16 me 16 me 16 me g fpm dram g fpm dram g fpm dram g fpm dram g fpm dram AS4C4M4 austin semiconductor, inc. austin semiconductor, inc. reserves the right to change products or specifications without notice. 2 AS4C4M4 rev. 1.0 5/03 functional block diagram ras\ v cc cas\ v ss w\ (a0 - a10) (a0 - a10) oe\ dq0 to dq3 control clocks vbb generator refresh timer refresh control refresh counter row address buffer col. address buffer memory array 4,194,304 x 4 cells row decoder column decoder sense amps & i/o data in buffer data out buffer *stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow, and humidity (plastics). absolute maximum ratings* voltage on any pin relative to v cc (v in , v out ) .....-1.0v to +7.0v voltage on v cc supply relative to v ss (v cc ).........-1.0v to +7.0v storage temperature (t stg )................................-55c to +150c power dissipation (p d ).............................................................1w short circuit output current (i os address).........................50ma electrical characteristics and recommended operating conditions (-55 o c < t a < +125 o c & -40 o c < t a < +85 o c ; vcc = 5v +10%) parameter symbol min typ max units supply voltage v cc 4.5 5.0 5.5 v input high voltage v ih 2.4 --- v cc + 0.5 1 v input low voltage v il -0.5 2 --- 0.8 v notes: 1. v cc + 2.0v/20ns, pulse width is measured at v cc 2. -2.0v/20ns, pulse width is measured at v ss
16 me 16 me 16 me 16 me 16 me g fpm dram g fpm dram g fpm dram g fpm dram g fpm dram AS4C4M4 austin semiconductor, inc. austin semiconductor, inc. reserves the right to change products or specifications without notice. 3 AS4C4M4 rev. 1.0 5/03 electrical characteristics and recommended dc operating conditions (-55 o c < t a < +125 o c & -40 o c < t a < +85 o c ; vcc = 5v +10%) parameter symbol min max units input leakage current (any input 0< v in < v in +0.5v, all other input pins not under test = 0 volt) i i(l) -5 5 ua output leaka g e current (data out is disabled, 0v< v out < v cc ) i o(l) -5 5 ua output high voltage (i oh = -5ma) v oh 2.4 --- v output low voltage (i ol = 4.2ma) v ol --- 0.4 v -60 -70 i cc1 * operating current (ras\ and cas\, address cycling @ t rc = min), power = don't care 110 100 ma i cc2 standby current (ras\ = cas\ = w\ = v ih ) power = normal l 33ma i cc3 * ras\-only refresh current (cas\ = v ih , ras\, address cycling @ t rc = min), power = don't care 110 100 ma i cc4 * fast page mode current (ras\ = v il , cas\, address cyclin g @ t pc = min), power = don't care 90 80 ma i cc5 standby current (ras\ = cas\ = w\ = vcc - 0.2v) power = normal l 22ma i cc6 * cas\-before-ras\ refresh current (ras\ and cas\ cycling @ t rc = min), power = don't care 110 100 ma i cc7 battery back-up current, avera g e power supply current, battery back - up mode, input high voltage (v ih ) = v cc - 0.2v, input low voltage (v il ) = 0.2v, cas\ = 0.2v, dq = don't care, t rc = 62.5us (2k/l-ver), t ras = t ras min ~ 300ns 11ma i ccs self refresh current, ras\ = cas\ = 0.2v, w\ = oe\ = a0 ~ a11 = v cc - 0.2v or 0.2v, dq0 ~ dq3 = v cc - 0.2v, 0.2v or open 11 max symbol parameters units notes: *i cc1 , i cc3 , i cc4 and i cc6 are dependent on output loading and cycle rates. specified values are obtained with the output open. i cc is specified as an average current. in i cc1 , i cc3 , and i cc6 address can be changed maximum once while ras\ = v il . in i cc4 , address can be changed maximum once within one fast page mode cycle time, t pc .
16 me 16 me 16 me 16 me 16 me g fpm dram g fpm dram g fpm dram g fpm dram g fpm dram AS4C4M4 austin semiconductor, inc. austin semiconductor, inc. reserves the right to change products or specifications without notice. 4 AS4C4M4 rev. 1.0 5/03 capacitance (t a < +25 o c ; vcc = 5v +10%) parameter symbol max units input capacitance (a0 - a11) c in1 6pf input capacitance (ras\, cas\, w\, oe\) c in2 8pf output capacitance (dq0 - dq3) c dq 8pf electrical characteristics and recommended ac operating conditions 1,2 (-55 o c 16 me 16 me 16 me 16 me 16 me g fpm dram g fpm dram g fpm dram g fpm dram g fpm dram AS4C4M4 austin semiconductor, inc. austin semiconductor, inc. reserves the right to change products or specifications without notice. 5 AS4C4M4 rev. 1.0 5/03 electrical characteristics and recommended ac operating conditions 1,2 (continued) min max min max t ds data set-up time 0 0 ns 9 t dh data hold time 10 12 ns 9 t ref refresh period 32 32 ms t wcs write command set-up time 0 0 ns 7 t cwd cas\ to w\ delay time 40 45 ns 7 t rwd ras\ to w\ delay time 85 90 ns 7 t awd column address to w\ delay time 55 60 ns 7 t cpwd cas\ precharge to w\ delay time 60 65 ns t csr cas\ set-up time (cas\-before-ras\ refresh) 5 5 ns t chr cas\ hold time (cas\-before-ras\ refresh) 10 15 ns t rpc ras\ to cas\ precharge time 5 5 ns t cpa access time from cas\ precharge 35 40 ns 3 t pc fast page cycle time 40 45 ns t prwc fast page read-modify-write cycle time 85 95 ns t cp cas\ precharge time (fast page cycle) 10 10 ns t rasp ras\ pulse width (fast page cycle) 60 100k 70 100k ns t rhcp ras\ hold time from cas\ precharge 35 40 ns t oea oe\ access time 15 17 ns t oed oe\ to data delay 15 17 ns t oez output buffer turn off delay time from oe\ 0 15 0 17 ns 6 t oeh oe\ command hold time 15 17 ns t wts write command set-up time (test mode in) 10 10 ns 11 t wth write command hold time (test mode in) 10 10 ns 11 t wrp w\ to ras\ precharge time (c\-b-r\ refresh) 10 10 ns t wrh w\ to ras\ hold time (c\-b-r\ refresh) 10 10 ns t rass ras\ pulse width (c\-b-r\ self refresh) 100 110 us 13, 14, 15 t rps ras\ precharge time (c\-b-r\ self refresh) 110 120 ns 13, 14, 15 t chs cas\ hold time (c\-b-r\ self refresh) -50 -50 ns 13, 14, 15 units notes symbol parameter -60 -70
16 me 16 me 16 me 16 me 16 me g fpm dram g fpm dram g fpm dram g fpm dram g fpm dram AS4C4M4 austin semiconductor, inc. austin semiconductor, inc. reserves the right to change products or specifications without notice. 6 AS4C4M4 rev. 1.0 5/03 test mode cycle 11 min max min max t rc random read or write cycle time 115 135 ns t rwc read-modify-write cycle time 160 180 ns t rac access time from ras\ 65 70 ns 3, 4, 10, 12 t cac access time from cas\ 20 22 ns 3, 4, 5, 12 t aa access time from column address 35 38 ns 3, 10 ,12 t ras ras\ pulse width 65 10k 75 10k ns t cas cas\ pulse width 20 10k 25 10k ns t rsh ras\ hold time 20 22 ns t csh cas\ hold time 65 70 ns t ral column address to ras\ lead time 35 40 ns t cwd cas\ to w\ delay time 45 48 ns 7 t rwd ras\ to w\ delay time 90 100 ns 7 t awd column address to w\ delay time 60 70 ns 7 t cpwd cas\ precharge to w\ delay time 65 70 ns t pc fast page cycle time 45 50 ns t prwc fast page read-modify-write time 90 100 ns t rasp ras\ pulse width (fast page cycle) 65 100k 75 100k ns t cpa access time from cas\ precharge 40 45 ns 3 t oea oe\ access time 20 22 ns t oed oe\ to data delay 20 22 ns t oeh oe\ command hold time 20 22 ns units notes symbol parameter -60 -70 notes: 1. an initial pause of 200us is required after power-up followed by an 8 ras\-only refresh or cas\-before-ras\ refresh cycles before proper device operation is achieved. 2. v ih (min) and v il (max) are reference levels for measuring timing of input signals. transition times are measured between v ih (min) and v il (max) and are assumed to be 5ns for all inputs. 3. measured with a load equivalent to 2 ttl loads and 100pf. 4. operation within the t rcd (max) limit insures that t rac (max) and be met. t rcd (max) is specified as a reference point only. if t rcd is greater than the specified t rcd (max) limit, then access time is controlled exclusively by t cac . 5. assumes that t rcd > t rcd (max). 6. t off (min) and t oez (max) define the time at which the output achieves the open circuit condition and are not referenced v oh or v ol . 7. t wcs , t rwd , t cwd and t awd are non restrictive operating parameters. they are included in the data sheet as electrical character- istics only. if t wcs > t wcs (min), the cycle is an early write cycle and the data output will remain high impedance for the duration of the cycle. if t cwd > t cwd (min), t rwd > t rwd (min) and t awd > t awd (min), then the cycle is a read-modify-write cycle and the data output will contain the data read from the selected address. if neither of the above conditions is satisfied, the condition of the data out is indeterminate. (continued on page 7)
16 me 16 me 16 me 16 me 16 me g fpm dram g fpm dram g fpm dram g fpm dram g fpm dram AS4C4M4 austin semiconductor, inc. austin semiconductor, inc. reserves the right to change products or specifications without notice. 7 AS4C4M4 rev. 1.0 5/03 read cycle notes (continued): 8. either t rch or t rrh must be satisfied for a read cycle. 9. these parameters are referenced to cas\ falling edge in early write cycles and to w\ falling edge in read-modify-write cycles. 10. operation within the t rad (max) limit insures that t rac (max) can be met. t rad (max) is specified as a reference point only. if t rad is greater than the specified t ras (max) limit, then access time is controlled by t aa . 11. these specifications are applied in the test mode. 12. in test mode read cycle, the value of t rac , t aa , t cac is delayed by 2ns to 5ns for the specified values. these parameters should be specified in test mode cycles by adding the above value to the specified value in this data sheet. 13. if t rass > 100 us, then ras\ precharge time must use t rps instead of t rp . 14. for ras\-only refresh and burst cas\-before-ras\ refresh mode, 2048 cycles of burst refresh must be executed within 32ms before and after self refresh, in order to meet refresh specification. 15. for distributed cas\-before-ras\ with 15.6us interval cas\-before-ras\ refresh should be executed with in 15.6us immediately before and after self refresh in order to meet refresh specification.
16 me 16 me 16 me 16 me 16 me g fpm dram g fpm dram g fpm dram g fpm dram g fpm dram AS4C4M4 austin semiconductor, inc. austin semiconductor, inc. reserves the right to change products or specifications without notice. 8 AS4C4M4 rev. 1.0 5/03 write cycle (early write) d out = open
16 me 16 me 16 me 16 me 16 me g fpm dram g fpm dram g fpm dram g fpm dram g fpm dram AS4C4M4 austin semiconductor, inc. austin semiconductor, inc. reserves the right to change products or specifications without notice. 9 AS4C4M4 rev. 1.0 5/03 write cycle (oe\ controlled write) d out = open
16 me 16 me 16 me 16 me 16 me g fpm dram g fpm dram g fpm dram g fpm dram g fpm dram AS4C4M4 austin semiconductor, inc. austin semiconductor, inc. reserves the right to change products or specifications without notice. 10 AS4C4M4 rev. 1.0 5/03 read-modify-write cycle
16 me 16 me 16 me 16 me 16 me g fpm dram g fpm dram g fpm dram g fpm dram g fpm dram AS4C4M4 austin semiconductor, inc. austin semiconductor, inc. reserves the right to change products or specifications without notice. 11 AS4C4M4 rev. 1.0 5/03 fast page read cycle
16 me 16 me 16 me 16 me 16 me g fpm dram g fpm dram g fpm dram g fpm dram g fpm dram AS4C4M4 austin semiconductor, inc. austin semiconductor, inc. reserves the right to change products or specifications without notice. 12 AS4C4M4 rev. 1.0 5/03 fast page write cycle (early write) d out = open
16 me 16 me 16 me 16 me 16 me g fpm dram g fpm dram g fpm dram g fpm dram g fpm dram AS4C4M4 austin semiconductor, inc. austin semiconductor, inc. reserves the right to change products or specifications without notice. 13 AS4C4M4 rev. 1.0 5/03 fast page read-modify-write cycle
16 me 16 me 16 me 16 me 16 me g fpm dram g fpm dram g fpm dram g fpm dram g fpm dram AS4C4M4 austin semiconductor, inc. austin semiconductor, inc. reserves the right to change products or specifications without notice. 14 AS4C4M4 rev. 1.0 5/03 ras\-only refresh cycle (w\, oe\, d in = don?t care; d out = open) cas\-before-ras\ refresh cycle (oe\, a = don?t care)
16 me 16 me 16 me 16 me 16 me g fpm dram g fpm dram g fpm dram g fpm dram g fpm dram AS4C4M4 austin semiconductor, inc. austin semiconductor, inc. reserves the right to change products or specifications without notice. 15 AS4C4M4 rev. 1.0 5/03 hidden refresh cycle (read)
16 me 16 me 16 me 16 me 16 me g fpm dram g fpm dram g fpm dram g fpm dram g fpm dram AS4C4M4 austin semiconductor, inc. austin semiconductor, inc. reserves the right to change products or specifications without notice. 16 AS4C4M4 rev. 1.0 5/03 hidden refresh cycle (write) d out = open
16 me 16 me 16 me 16 me 16 me g fpm dram g fpm dram g fpm dram g fpm dram g fpm dram AS4C4M4 austin semiconductor, inc. austin semiconductor, inc. reserves the right to change products or specifications without notice. 17 AS4C4M4 rev. 1.0 5/03 cas\-before-ras\ self refresh cycle (oe\, a = don?t care) test mode in cycle (oe\, a = don?t care)
16 me 16 me 16 me 16 me 16 me g fpm dram g fpm dram g fpm dram g fpm dram g fpm dram AS4C4M4 austin semiconductor, inc. austin semiconductor, inc. reserves the right to change products or specifications without notice. 18 AS4C4M4 rev. 1.0 5/03 *all measurements are in inches (millimeters). mechanical definitions* package designator dg
16 me 16 me 16 me 16 me 16 me g fpm dram g fpm dram g fpm dram g fpm dram g fpm dram AS4C4M4 austin semiconductor, inc. austin semiconductor, inc. reserves the right to change products or specifications without notice. 19 AS4C4M4 rev. 1.0 5/03 ordering information *available processes it = industrial temperature range -40 o c to +85 o c xt = military temperature range -55 o c to +125 o c example: AS4C4M4dg-7/it device number package type speed process AS4C4M4 dg -6 /* AS4C4M4 dg -7 /*

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