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| savantic semiconductor product specification silicon npn power transistors tip33/33a/33b/33c description with to-3pn package complement to type tip34/34a/34b/34c dc current gain h fe =40(min)@i c =1.0a applications designed for use in general purpose power amplifier and switching applications. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(t c =25) symbol parameter conditions value unit tip33 40 tip33a 60 tip33b 80 v cbo collector-base voltage TIP33C open emitter 100 v tip33 40 tip33a 60 tip33b 80 v ceo collector-emitter voltage TIP33C open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current 10 a i cm collector current-peak 15 a i b base current 3 a p c collector power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.56 /w fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors tip33/33a/33b/33c characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit tip33 40 tip33a 60 tip33b 80 v ceo(sus) collector-emitter sustaining voltage TIP33C i c =30ma ;i b =0 100 v v ce (sat) -1 collector-emitter saturation voltage i c =3a ;i b =0.3a 1.0 v v ce (sat) -2 collector-emitter saturation voltage i c =10a; i b =2.5a 4.0 v v be-1 base-emitter on voltage i c =3a ; v ce =4v 1.6 v v be-2 base-emitter on voltage i c =10a ; v ce =4v 3.0 v tip33/33a v ce =30v; i b =0 i ceo collector cut-off current tip33b/33c v ce =60v; i b =0 0.7 ma tip33 v ce =40v;v eb =0 tip33a v ce =60v;v eb =0 tip33b v ce =80v;v eb =0 i ces collector cut-off current TIP33C v ce =100v;v eb =0 0.4 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma h fe-1 dc current gain i c =1a ; v ce =4v 40 h fe-2 dc current gain i c =3a ; v ce =4v 20 100 f t transition frequency i c =0.5a ; v ce =10v;f=1mhz 3.0 mhz savantic semiconductor product specification 3 silicon npn power transistors tip33/33a/33b/33c package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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