leshan radio company, ltd. MMVL109T1?1/2 plastic, case 477 sod? 323 1 2 maximum ratings symbol rating v alue unit v r continuous reverse voltage 30 vdc i f peak forward current 200 madc thermal characteristics symbol characteristic max unit p d total device dissipation fr?5 board,* 200 mw t a = 25c derate above 25c 1.57 mw/c r ja thermal resistance junction to ambient 635 c/w t j , t stg junction and storage temperature range -55 to +150 c *fr?5 minimum pad electrical characteristics (t a = 25c unless otherwise noted) characteristic symbol min typ max unit reverse breakdownvoltage v (br)r 30 ? ? vdc (i r = 10 adc) rev erse voltage leakage current i r ? ? 0.1 adc (v r = 25 vdc) diode capacitance temperature coefficient tc c ? 300 ? ppm/c (v r = 3.0 vdc, f = 1.0 mhz) c t , diode capacitance q, figure of merit c r , capacitance ratio v r = 3.0 vdc, f = 1.0 mhz v r = 3.0 vdc c 3 /c 25 pf f = 50 mhz f = 1.0 mhz(note 1) device min nom max min min max MMVL109T1 26 29 32 200 5.0 6.5 1. c r is the ratio of c t measured at 3 vdc divided by c t measured at 25 vdc. designed for general frequency control and tuning applications; providing solid?state reliability in replacement of mechnaical tuning methods. high q with guaranteed minimum values at vhf frequencies controlled and uniform tuning ratio surface mount package device marking: 4a MMVL109T1 26?32 pf voltage variable capacitance diodes silicon epicap diode ordering information device package shipping MMVL109T1 sod?323 3000 / t ape & reel 2 anode 1 cathode
leshan radio company, ltd. MMVL109T1?2/2 MMVL109T1 typical characteristics figure 1. diode capacitance 40 32 24 16 8 0 1 3 10 30 100 v r , reverse voltage (volts) c t , ca p acitance pf figure 2. figure of merit f, frequency (mhz) figure 3. leakage current t a , ambient temperature figure 4. diode capacitance t a , ambient temperature q, figure of merit 10 1000 100 10 100 1000 , rever s e c u rrent (n a) 100 60 0.01 0.001 0 +40 +100 c t , diode capacitance (normalized) 1.04 75 1.02 1.00 0.98 0.96 25 +25 +75 +125 v r = 3.0 vdc f = 1.0 mhz c t c c + c j 36 28 20 12 4 f = 1.0 mhz t a = 25 c v r = 3 vdc t a = 25 c v r = 20 vdc +120 +140 +80+60 +20 40 20 i r 0.1 1.0 10 20 2.0 0.2 0.02 0.002 0.006 0.06 0.6 6.0 60 50 0 +50 +100 1.03 1.01 0.99 0.97 notes on testing and specifications 1. c r is the ratio of c t measured at 3.0 vdc divided by c t measured at 25 vdc.
|
