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| transistor(pnp) features high voltage transistor marking:2d maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -300 v v ceo collector-emitter voltage -300 v v ebo emitter-base voltage -5 v i c collector current -continuous -300 ma p c collector power dissipation 300 mw t j junction temperature 150 t stg storage temperature -55-150 r ? ja thermal resistance, junction to ambient 410 /mw electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo i c = -100 a, i e =0 -300 v collector-emitter breakdown voltage v (br)ceo i c = -1ma, i b =0 -300 v emitter-base breakdown voltage v (br)ebo i e = -100 a, i c =0 -5 v collector cut-off current i cbo v cb =-200v, i e =0 -0.25 a emitter cut-off current i ebo v eb = -5v, i c =0 -0.1 a h fe(1) v ce = -10v, i c = -1ma 60 h fe(2) v ce = -10v, i c =-10ma 100 200 dc current gain h fe(3) v ce = -10v, i c =-30ma 60 collector-emitter saturation voltage v ce (sat) i c =-20ma, i b = -2ma -0.2 v base-emitter saturation voltage v be (sat) i c = -20ma, i b = -2ma -0.9 v transition frequency f t v ce =-20v, i c = -10ma f= 30mhz 50 mhz so t -23 1. base 2. emitter 3. collector MMBTA92 1 date:2011/05 www.htsemi.com semiconductor jinyu
MMBTA92 2 date:2011/05 www.htsemi.com semiconductor jinyu |
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