to-92 plastic-encapsulate transistors A44 transistor (npn) features y high voltage maximum ratings ( t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 400 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 5 v i c collector current -continuous 0.2 a p c collector power dissipation 0.625 w t j junction temperature 150 t stg storage temperature -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 100 a , i e =0 400 v collector-emitter breakdown voltage v (br)ceo i c = 1ma , i b =0 400 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 v collector cut-off current i cbo v cb =400 v, i e =0 0.1 a collector cut-off current i ceo v ce =400 v 5 a emitter cut-off current i ebo v eb = 4v, i c =0 0.1 a h fe (1) v ce =10v , i c =10ma 80 300 h fe(2) v ce =10v, i c =1ma 70 h fe(3) v ce =10v, i c =100ma 40 dc current gain h fe(4) v ce =10v, i c =50ma 80 v ce(sat) i c =10ma, i b =1ma 0.2 v collector-emitter saturation voltage v ce(sat) i c =50ma, i b =5ma 0.3 v base-emitter sataration voltage v be(sat) i c =10ma, i b = 1ma 0.75 v transition frequency f t v ce =20v, i c =10ma f =30mhz 50 mhz classification of h fe(1) rank a b1 b2 c range 80-100 100-150 150-200 200-300 1 2 3 to-92 1. emitter 2. base 3. collector
|