1 ELM34609AA-N ELM34609AA-N uses advanced trench technology to provide excellent rds(on) and low gate charge. n-channel p-channel ? vds=30v vds=-30v ? id=4a id=-3a ? rds(on) < 65m(vgs=10v) rds(on) < 150m(vgs=-10v) ? rds(on) < 120m(vgs=4.5v) rds(on) < 250m(vgs=-4.5v) parameter symbol n-ch (max.) p-ch (max.) unit note drain - source voltage vds 30 -30 v gate - source voltage vgs 20 20 v continuous drain current ta=25c id 4 -3 a ta=70c 3 -2 pulsed drain current idm 10 -10 a 3 power dissipation ta=25c pd 2.0 2.0 w ta=70c 1.3 1.3 junction and storage temperature range tj,tstg - 55 to 150 - 55 to 150 c general description features maximum absolute ratings thermal characteristics parameter symbol device typ. max. unit note maximum junction - to - ambient rja n-ch 110 c /w maximum junction - to - ambient rja p-ch 110 c /w complementary mosfet s 2 g 2 d 2 s 1 g 1 d 1 circuit ? n-ch ? p-ch 7 - pin configuration sop-8(top view) pin no. pin name 1 source1 2 gate1 3 source2 4 gate2 5 drain2 6 drain2 7 drain1 8 drain1 4 3 2 1 5 6 7 8
2 electrical characteristics (n-ch) parameter symbol conditions min. typ. max. unit note static parameters drain - source breakdown voltage bvdss id=250a, vgs=0v 30 v zero gate voltage drain current idss vds=24v, vgs = 0v 1 a vds=20v, vgs = 0v, tj=55c 10 gate - body leakage current igss vds=0v, vgs= 20v 100 na gate threshold voltage vgs(th) vds=vgs, id=250a 0.9 1.5 2.5 v on state drain current id(on) vgs=10v, vds=5v 10 a 1 static drain - source on - resistance rds(on) vgs=10v, id= 4a 48 65 m 1 vgs = 4.5v, id = 3a 72 120 forward transconductance gfs vds = 10v, id = 3a 6 s 1 diode forward voltage vsd if = 0.9a, vgs=0v 1.2 v 1 dynamic parameters input capacitance ciss vgs=0v, vds=10v, f=1mhz 265 pf output capacitance coss 65 pf reverse transfer capacitance crss 40 pf switching parameters total gate charge qg vgs=10v, vds=15v, id=3a 5.0 7.5 nc 2 gate - source charge qgs 0.8 nc 2 gate - drain charge qgd 1.0 nc 2 turn - on delay time td(on) vgs=10v, vds=15v, id1a rl=15, rgen=6 7 11 ns 2 turn - on rise time tr 12 18 ns 2 turn - off delay time td(off) 12 18 ns 2 turn - off fall time tf 7 11 ns 2 body - diode reverse recovery time trr if =0.9 a, dl/dt = 100a/s 40 80 ns ELM34609AA-N complementary mosfet ta=25 c note : 1. pulse test : pulsed width300sec and duty cycle2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. 4. duty cycle 1%. 7 -
3 7 - complementary mosfet ELM34609AA-N typical electrical and thermal characteristics (n-ch) 4 jun-26-2006 n- & p-channel enhancement mode field effect transistor p6503njg tsopjw-8 lead-free
4 ELM34609AA-N complementary mosfet 7 - 5 jun-26-2006 n- & p-channel enhancement mode field effect transistor p6503njg tsopjw-8 lead-free niko-sem
5 7 - complementary mosfet ELM34609AA-N ta=25 c note : 1. pulse test : pulsed width300sec and duty cycle2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. electrical characteristics (p-ch) parameter symbol conditions min. typ. max. unit note static parameters drain - source breakdown voltage bvdss id= - 250a, vgs=0v -30 v zero gate voltage drain current idss vds=-24v, vgs= 0v - 1 a vds=-20v, vgs= 0v, tj=55c -10 gate-body leakage current igss vds=0v, vgs= 20v 100 na gate threshold voltage vgs(th) vds=vgs, id= - 250a -0.9 -1.5 -2.5 v on state drain current id(on) vgs= - 10v, vds= - 5v -10 a 1 static drain - source on - resistance rds(on) vgs=-10v, id=-3 a 100 150 m 1 vgs =- 4.5v, id =- 2a 170 250 forward transconductance gfs vds =- 10v, id =-2 a 3 s 1 diode forward voltage vsd if =-0.9a , vgs=0v -1.2 v 1 dynamic parameters input capacitance ciss vgs=0v, vds=-10v, f=1mhz 290 pf output capacitance coss 65 pf reverse transfer capacitance crss 40 pf switching parameters total gate charge qg vgs=-10v, vds=-15v id=-2a 5.5 6.6 nc 2 gate-source charge qgs 1.2 nc 2 gate-drain charge qgd 0.9 nc 2 turn - on delay time td(on) vgs=-10v, vds=-15v id-1a, rl=15, rgen=6 8 12 ns 2 turn - on rise time tr 11 18 ns 2 turn - off delay time td(off) 14 21 ns 2 turn - off fall time tf 8 12 ns 2 body - diode reverse recovery time trr if =-0.9 a, dl/dt = 100a/s 40 80 ns
6 ELM34609AA-N complementary mosfet 7 - typical electrical and thermal characteristics (p-ch) 6 jun-26-2006 n- & p-channel enhancement mode field effect transistor p6503njg tsopjw-8 lead-free
7 7 - complementary mosfet ELM34609AA-N 7 jun-26-2006 n- & p-channel enhancement mode field effect transistor p6503njg tsopjw-8 lead-free niko-sem
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