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| inchange semiconductor product specification silicon npn power transistors BU508AF description ? with to-3pfa package ? high voltage ? high speed switching applications ? for use in horizontal deflection circuits of high resolution monitors pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 7.5 v i c collector current (dc) 8 a i cp collector current (pulse) 15 a i b base current (dc) 4 a i bm base current (pulse) 6 a p tot total power dissipation t c =25 ?? 34 w t j junction temperature 150 ?? t stg storage temperature -65~150 ??
inchange semiconductor product specification 2 silicon npn power transistors BU508AF characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ;i b =0,l=25mh 700 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 7.5 13.5 v v cesat collector-emitter saturation voltage i c =4.5a; i b =1.6a 1.0 v v besat base-emitter saturation voltage i c =4.5a ;i b =2a 1.1 v i ces collector cut-off current v ce =ratedv ce ; v be =0 t c =125 ?? 1.0 2.0 ma i ebo emitter cut-off current v eb =6v; i c =0 10 ma h fe dc current gain i c =0.1a ; v ce =5v 6 30 f t transition frequency i c =0.1a ; v ce =5v 7 mhz c ob output capacitance i e =0 ; v cb =10v;f=1mhz 125 pf inchange semiconductor product specification 3 silicon npn power transistors BU508AF package outline fig.2 outline dimensions (unindicated tolerance: ? 0.30mm) |
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