one watt darlington transistors pnp silicon these devices are available in pb ? free package(s). specifications herein apply to both standard and pb ? free devices. please see our website at www.onsemi.com for specific pb ? free orderable part numbers, or contact your local on semiconductor sales office or representative. maximum ratings rating symbol MPSW63 mpsw64 unit collector ? emitter voltage v ces ? 30 vdc collector ? base voltage v cbo ? 30 vdc emitter ? base voltage v ebo ? 10 vdc collector current ? continuous i c ? 500 madc total device dissipation @ t a = 25 c derate above 25 c p d 1.0 8.0 watt mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 2.5 20 watts mw/ c operating and storage junction temperature range t j , t stg ? 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 125 c/w thermal resistance, junction to case r jc 50 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (i c = ? 100 adc, v be = 0) v (br)ces ? 30 ? vdc collector cutoff current (v cb = ? 30 vdc, i e = 0) i cbo ? ? 100 nadc emitter cutoff current (v eb = ? 10 vdc, i c = 0) i ebo ? ? 100 nadc preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2006 march, 2006 ? rev. 3 1 publication order number: MPSW63/d MPSW63 mpsw64 case 29 ? 10, style 1 to ? 92 (to ? 226ae) 1 2 3 * *on semiconductor preferred device collector 3 base 2 emitter 1
MPSW63 mpsw64 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics (1) dc current gain (i c = ? 10 madc, v ce = ? 5.0 vdc) MPSW63 mpsw64 (i c = ? 100 madc, v ce = ? 5.0 vdc) MPSW63 mpsw64 h fe 5,000 10,000 10,000 20,000 ? ? ? ? ? collector ? emitter saturation voltage (i c = ? 100 madc, i b = ? 0.1 madc) v ce(sat) ? ? 1.5 vdc base ? emitter on voltage (i c = ? 100 madc, v ce = ? 5.0 vdc) v be(on) ? ? 2.0 vdc small ? signal characteristics current ? gain ? bandwidth product (2) (i c = ? 10 madc, v ce = ? 5.0 vdc, f = 100 mhz) f t 125 ? mhz 1. pulse test: pulse width 300 s, duty cycle 2.0%. 2. f t = |h fe | ? f test . typical electrical characteristics figure 1. dc current gain figure 2. ?on? voltage figure 3. collector saturation region ?1.0 ?2.0 ?0.5 i c , collector current (ma) 200 50 5.0 3.0 2.0 ?1.0 ?100 ?0.3 i c , collector current (ma) ?1.6 ?2.0 ?0.8 ?0.4 0 i b , base current ( a) ?0.6 ?30 h fe , dc current gain (x1.0 k) v, voltage (volts) ?10 ?20 ?7.0 ?100 ?200 ?50 70 ?3.0 ?5.0 ?10 ?50 ?2.0 ?1.6 ?1.4 ?1.2 ?1.0 ?30 ?70 ?300 ?5.0 ?3.0 ?0.7 30 100 ?300 ?1.2 ?0.3 ?100 ?0.1 ?1.0 ?3.0 ?10 ?30 ?300 ?1 k v , collector?emitter voltage (volts) ce ?0.3 10 7.0 20 ?0.5 ?3 k ?10 k ?0.8 ?1.8 t j = 25 c i c = ?10 ma ?50 ma ?100 ma ?175 ma ?300 ma t j = 25 c i c /i b = 100 t j = 125 c 25 c ?55 c ?10 v v ce = ?2.0 v ?5.0 v v be(sat) @ i c /i b = 100 v ce(sat) @ i c /i b = 1000 v be(on) @ v ce = ?5.0 v
MPSW63 mpsw64 http://onsemi.com 3 figure 4. temperature coefficients figure 5. current ? gain ? bandwidth product figure 6. capacitance figure 7. active region, safe operating area ?0.5 ?100 ?0.3 i c , collector current (ma) +5.0 +1.0 ?1.0 ?2.0 ?3.0 ?5.0 i c , collector current (ma) 20 ?10 ?0.5 ?2.0 ?0.1 v r , reverse voltage (volts) 5.0 7.0 3.0 2.0 v ce , collector?emitter voltage (volts) ?1 k ?500 ?200 ?100 ?1.0 r i ?10 ?5.0 ?20 ?1.0 ?5.0 ?20 ?4.0 600 100 60 40 30 c, capacitance (pf) ?300 0 ?0.5 ?100 ?0.3 ?10 ?1.0 ?2.0 ?5.0 ?50 ?300 f , current?gain ? bandwidth product (mhz) ?0.2 ?30 10 ?2 k ?5.0 ?1.5 ?20 ?10 ?30 ?2.0 t , collector current (ma) c 15 20 ?20 400 300 200 +2.0 +4.0 +3.0 ?2.0 ?50 c ibo c obo t j = 25 c f = 1.0 mhz , temperature coefficient (mv/ c) v t j = 25 c *applies for i c /i b h fe /100 +25 c to +125 c ?50 c to +25 c r vb for v be *r vc for v ce(sat) +25 c to +125 c ?50 c to +25 c v ce = ?20 v ?10 v ?5.0 v current limit thermal limit second breakdown limit duty cycle 10% t a = 25 c t c = 25 c 1.0 s 1.0 ms 100 s
MPSW63 mpsw64 http://onsemi.com 4 package dimensions case 29 ? 10 issue al to ? 92 (to ? 226) c r n n 1 j section x ? x d 23 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. dimension f applies between p and l. dimensions d and j apply between l and k mimimum. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p l f b k g h xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.44 5.21 b 0.290 0.310 7.37 7.87 c 0.125 0.165 3.18 4.19 d 0.018 0.021 0.457 0.533 f 0.016 0.019 0.407 0.482 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.018 0.024 0.46 0.61 k 0.500 ??? 12.70 ??? l 0.250 ??? 6.35 ??? n 0.080 0.105 2.04 2.66 p ??? 0.100 ??? 2.54 r 0.135 ??? 3.43 ??? yle 1: pin 1. emitter 2. base 3. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2 ? 9 ? 1 kamimeguro, meguro ? ku, tokyo, japan 153 ? 0051 phone : 81 ? 3 ? 5773 ? 3850 MPSW63/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082 ? 1312 usa phone : 480 ? 829 ? 7710 or 800 ? 344 ? 3860 toll free usa/canada fax : 480 ? 829 ? 7709 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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