2002. 2. 18 1/4 semiconductor technical data KRX212U revision no : 0 switching application. interface circuit and driver circuit application. features including two devices in us6. (ultra super mini type with 6 leads.) with built-in bias resistors. simplify circuit design. reduce a quantity of parts and manufacturing process. dim millimeters a b d g us6 2.00 0.20 1.25 0.1 2.1 0.1 0.2+0.10/-0.05 0-0.1 0.9 0.1 0.65 0.15+0.1/-0.05 b1 h c t g 1 3 2 b b1 d a h t 6 4 c c a1 1.3 0.1 a1 5 + _ + _ + _ + _ + _ 1. q (emitter) 4. q common (emitter) 3. q out (collector) 5. q in (base) 6. q (collector) 1 2 2. q (base) 1 1 2 2 equivalent circuit q1 maximum rating (ta=25 1 ) e c q 1 b r1 r2 common out q 2 2 in q r1=2.2k ? r2=2.2k ? 1 q1 23 65 4 q2 equivalent circuit (top view) * total raing. characteristic symbol rating unit collector-base voltage v cbo 15 v collector-emitter voltage v ceo 12 v emitter-base voltage v ebo 6 v collector current i c 500 h i cp * 1 a characteristic symbol rating unit output voltage v o 50 v input voltage v i 12, -10 v output current i o 100 h characteristic symbol rating unit power dissipation p d * 200 m junction temperature t j 150 1 storage temperature range t stg -55 150 1 bg type name 123 4 6 5 q2 maximum rating (ta=25 1 ) q1, q2 maximum rating (ta=25 1 ) marking epitaxial planar npn transistor * single pulse pw=1ms.
2002. 2. 18 2/4 KRX212U revision no : 0 q1 electrical characteristics (ta=25 1 ) characteristic symbol test condition min. typ. max. unit. output cut-off current i o(off) v o =50v, v i =0 - - 500 f dc current gain g i v o =5v, i o =20 h 20 - - output voltage v o(on) i o =10 h , i i =0.5 h - 0.1 0.3 v input voltage (on) v i(on) v o =0.3v, i o =20 h - 1.83 3 v input voltage (off) v i(off) v o =5v, i o =0.1 h 0.5 1.15 - v transition frequency f t * v o =10v, i o =5 h - 250 - r input current i i v i =5v - - 3.8 h note : * characteristic of transistor only. q2 electrical characteristics (ta=25 1 ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =15v, i e =0 - - 100 na collector-base breakdown voltage v (br)cbo i e =10 a 15 - - v collector-emitter breakdown voltage v (br)ceo i c =1ma 12 - - v emitter-base breakdown voltage v (br)ebo i e =10 a 6 - - v dc current gain h fe v ce =2v, i c =10ma 270 - 680 - collector-emitter saturation voltage v ce(sat) i c =200ma, i b =10ma - 90 250 mv transition frequency f t v ce =2v, i c =10ma, f t =100mhz - 320 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 7.5 - pf
2002. 2. 18 3/4 KRX212U revision no : 0 c collector current i (ma) base-emitter voltage v (v) be i - v c be ta= 125 c v =2v i /i =20 ce v =2v ce v =2v ce cb i /i =20 cb i /i =50 cb i /i =2 0 c b i / i = 10 c b ta = 25 c ta=- 40 c ta=125 c ta=25 c ta=-40 c ta=25 c ta=125 c ta=25 c ta=-40 c ta=25 c ta=1 25 c ta=25 c ta=-40 c 10 1k 30 50 100 300 500 v - i c collector current i (ma) ce(sat) c ce(sat) collector-emitter saturation voltage v (mv) 13 1 10 30 100 300 1k 3 5 10 30 50 100 300 500 1k v - i c collector current i (ma) ce(sat) c ce(sat) collector-emitter saturation voltage v (mv) 13 1 10 30 100 300 1k 3 5 10 30 50 100 300 500 1k 0 1 0.5 1.0 1.5 3 5 10 30 50 100 300 500 1k f - i c collector current i (ma) tc t transition frequency f (mhz) 13 10 30 100 300 1 k 100 10k 300 500 1k 3k 5k v - i c collector current i (ma) be(sat) c be(sat) base-emitter saturation voltage v (mv) 13 10 30 100 300 1k 10 1k 30 50 100 300 500 13 10 30 100 300 1k dc current gain h fe collector current i (ma) q (npn transistor) c h - i fe 1 c
2002. 2. 18 4/4 KRX212U revision no : 0 c - v , c - v cb collector-base voltage v (v) eb emitter-base voltage v (v) q (npn transistor) ob 1 q 2 q 2 q 2 c ob cb ib collector input capacitance c (pf) ob collector output capacitance c (pf) 0.1 0.3 1 1 3 10 30 100 3 5 10 30 50 100 300 500 1k ib c ib eb i =0a f=1mhz ta=25 c e collector lpower dissipation p (mw) 0 c 0 ambient temperature ta ( c) pc - ta 25 50 75 100 125 50 100 150 200 250 150 input on voltage v (v) output current i (ma) o i(on) i - v o i(on) input off voltage v (v) output current i ( a) o i(off) i - v o i(off) output current i (ma) dc current gain g i o g - i i o o ta=100 c 0.3 10 0.1 0.5 0.3 1 3 5 100 50 30 v =0.2v 13 ta=-25 c ta=25 c 10 0.1 v =5v 3.0 1.0 0 30 100 50 0.5 2 .0 1.5 2.5 o 300 1k 500 3k ta =-25 c ta =100 c ta= 25 c 3 1 v =5v o 10 30 100 ta=1 00 c ta=25 c ta=-25 c 5 3 10 100 30 50 300
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