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| inchange semiconductor isc product specification isc silicon npn power transistor BUV37 description collector-emitter sustaining voltage- : v ceo(sus) = 400v(min.) low collector saturation voltage- : v ce(sat) = 2.0v(max.)@ i c = 10a applications designed for use in automot ive ignition circuits. absolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector-base voltage 600 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 8 v i c collector current- continuous 15 a i cm collector current-peak 30 a i b b base current - continuous 4 a p c collector power dissipation @t c =25 100 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.25 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BUV37 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ max unit v ceo(sus) collector-emitter sustaining voltage i c = 5a; i b = 0; l= 15mh b 400 v v ce (sat)-1 collector-emitter saturation voltage i c = 7 a; i b = 70ma 1.5 v v ce (sat)-2 collector-emitter saturation voltage i c = 10 a; i b = 150ma b 2.0 v v be (sat) base-emitter saturation voltage i c = 10 a; i b = 150ma b 2.7 v i ceo collector cutoff current v ce = 400v; i b = 0 0.25 ma i ebo emitter cutoff current v eb = 6v; i c = 0 40 ma h fe dc current gain i c = 15a; v ce = 5v 20 isc website www.iscsemi.cn |
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