data sheet silicon transistor 2sc4955 high frequency low noise amplifier npn silicon epitaxial transistor mini mold features low noise, high gain low voltage operation low feedback capacitance cre = 0.4 pf typ. ordering information part quantity packing style number 2sc4955-t1 3 kpcs/reel. embossed tape 8 mm wide. pin3 (collector) face to perforation side of the tape. 2sc4955-t2 3 kpcs/reel. embossed tape 8 mm wide. pin1 (emitter), pin2 (base) face to perforation side of the tape. * to order evaluation samples, contact your nearby sales office. unit sample quantity shall be 50 pcs. (part no.: 2sc4955) absolute maximum ratings (t a = 25 ?c) collector to base voltage v cbo 9v collector to emitter voltage v ceo 6v emitter to base voltage v ebo 2v collector current i c 30 ma total power dissipation p t 180 mw junction temperature t j 150 ?c storage temperature t stg ?4 to +150 ?c package dimensions in millimeters 2.90.2 0.95 0.95 0.4 0.05 +0.1 1.5 0.4 0.05 +0.1 2.80.2 0.65 0.15 +0.1 3 2 1 0.16 0.06 +0.1 0 to 0.1 1.1 to 1.4 0.3 marking pin connections 1. emitter 2. base 3. collector document no. pu10038ej01v0ds (1st edition) (previous no. p10377ej2v0ds00) date published october 2001 cp(k) printed in japan ? nec corporation 1993 ? nec compound semiconductor devices 2001 the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec compound semiconductor devices representative for availability and additional information. the mark shows major revised points.
2sc4955 2 data sheet pu10038ej01v0ds electrical characteristics (t a = 25 ?c) characteristic symbol min. typ. max. unit test conditions collector cutoff current i cbo 0.1 av cb = 5 v, i e = 0 emitter cutoff current i ebo 0.1 av eb = 1 v, i c = 0 dc current gain h fe 75 150 v cb = 3 v, i c = 10 ma * 1 gain bandwidth product f t 12 ghz v ce = 3 v, i c = 10 ma feed-back capacitance c re 0.4 0.7 pf v cb = 3 v, i e = 0, f = 1 mhz * 2 insertion gain |s 21e | 2 7 8.5 db v ce = 3 v, i c = 10 ma, f = 2.0 ghz noise figure nf 1.5 2.5 db v ce = 3 v, i c = 3 ma, f = 2.0 ghz *1 pulse measurement; pw 350 s, duty cycle 2 % pulsed. *2 measured with 3 terminals bridge, emitter and case should be grounded. h fe classification rank t83/fb * marking t83 h fe 75 to 150 * old specification/new specification typical characteristics (t a = 25 ?c) total power dissipation vs. ambient temperature t a - ambient temperature - ?c 50 200 100 0 50 100 150 40 30 20 10 0 0.5 1.0 v ce = 3 v p t - total power dissipation - mw collector current vs. base to emitter voltage i c - collector current - ma v be - base to emitter voltage - v 180 mw free air
2sc4955 data sheet pu10038ej01v0ds 3 collector current vs. collector to emitter voltage dc current gain vs. collector current 60 01 500 a 400 a 300 a 200 a i b = 100 a 50 40 30 20 10 23456 0.1 200 100 0 0.2 0.5 1 2 5 10 20 50 100 5 v v ce = 3 v i c - collector current - ma v ce - collector to emitter voltage - v i c - collector current - ma h fe - dc current gain gain bandwidth product vs. collector current insertion gain vs. collector current 1 12 14 0.5 12 10 8 6 4 2 12 51020 50 5 v 3 v v ce = 1 v 10 8 6 4 2 5 10 20 50 i c - collector current - ma i c - collector current - ma f t - gain bandwidth product - ghz f = 2 gh z |s 21e | 2 - insertion power gain - db 5 v f = 2 gh z 3 v v ce = 1 v 0.1 0.5 4 0.5 3 2 1 0 12 51020 50 0.2 0.3 0.4 0.5 12 51020 feed-back capacitance vs. collector to base voltage noise figure vs. collector current f = 2 gh z v ce = 3 v nf - noise figure - db i c - collector current - ma c re - feed-back capacitance - pf v cb - collector to base voltage - v f = 1 mh z
2sc4955 4 data sheet pu10038ej01v0ds s-parameter (v ce = 3 v, i c = 1 ma, z o = 50 ? ) frequency s 11 s 21 s 12 s 22 (ghz) mag ang mag ang mag ang mag ang 0.200 0.9400 15.3 3.4560 165.0 0.0420 76.0 0.9780 8.7 0.400 0.8770 29.0 3.1870 149.2 0.0800 71.7 0.9490 16.0 0.600 0.8020 43.6 3.0390 136.4 0.1140 63.8 0.8910 23.4 0.800 0.7030 55.3 2.8000 123.9 0.1340 56.7 0.8280 29.1 1.000 0.6240 67.2 2.5890 113.1 0.1520 52.2 0.7630 33.7 1.200 0.5570 79.0 2.4320 102.9 0.1690 49.0 0.7170 37.9 1.400 0.4670 89.9 2.2140 94.7 0.1810 45.6 0.6940 41.8 1.600 0.4130 99.8 2.0430 86.9 0.1880 45.2 0.6450 43.9 1.800 0.3680 108.1 1.8790 79.0 0.1910 43.0 0.6050 46.2 2.000 0.3140 120.9 1.7720 73.0 0.1990 44.3 0.5860 50.5 2.200 0.2690 137.1 1.7010 66.9 0.2140 45.9 0.5600 53.7 2.400 0.2740 147.6 1.6030 61.4 0.2170 44.2 0.5520 54.5 2.600 0.2530 157.0 1.5010 57.1 0.2270 46.9 0.5260 58.3 2.800 0.2200 175.7 1.4330 51.6 0.2460 46.7 0.5160 61.4 3.000 0.2130 173.7 1.3860 47.5 0.2500 48.9 0.4870 64.7 (v ce = 3 v, i c = 3 ma, z o = 50 ? ) frequency s 11 s 21 s 12 s 22 (ghz) mag ang mag ang mag ang mag ang 0.200 0.8160 24.9 8.5180 154.3 0.0410 77.4 0.9240 14.9 0.400 0.6610 42.6 6.9310 133.1 0.0680 67.4 0.8190 24.8 0.600 0.5300 58.7 5.7770 118.4 0.0900 64.1 0.7120 31.7 0.800 0.4090 69.1 4.8150 106.7 0.1070 61.2 0.6430 34.3 1.000 0.3280 79.6 4.1130 97.3 0.1250 62.3 0.5820 36.7 1.200 0.2670 88.9 3.6270 89.7 0.1440 58.4 0.5300 38.1 1.400 0.2080 98.5 3.1680 83.4 0.1570 57.1 0.5100 40.9 1.600 0.1800 108.0 2.8600 77.1 0.1680 58.4 0.4870 41.6 1.800 0.1300 112.7 2.5690 71.9 0.1870 57.7 0.4550 42.6 2.000 0.0970 132.3 2.3660 66.9 0.2030 56.7 0.4490 45.7 2.200 0.0830 156.8 2.2340 62.7 0.2230 55.3 0.4250 50.3 2.400 0.1010 167.1 2.0840 57.4 0.2450 56.3 0.4270 48.0 2.600 0.0840 169.7 1.9230 54.3 0.2540 56.5 0.4120 55.0 2.800 0.0950 156.3 1.8400 49.5 0.2760 54.9 0.3850 58.0 3.000 0.1010 126.6 1.7450 46.5 0.2930 52.0 0.3650 59.7
2sc4955 data sheet pu10038ej01v0ds 5 s-parameter (v ce = 3 v, i c = 5 ma, z o = 50 ? ) frequency s 11 s 21 s 12 s 22 (ghz) mag ang mag ang mag ang mag ang 0.200 0.7170 30.9 11.5670 147.4 0.0340 77.4 0.8840 18.6 0.400 0.5230 48.6 8.6210 124.7 0.0630 68.1 0.7490 28.2 0.600 0.4020 64.1 6.7610 110.7 0.0840 67.1 0.6190 32.6 0.800 0.2860 71.9 5.4360 100.2 0.0970 62.7 0.5560 34.2 1.000 0.2270 77.9 4.5550 91.8 0.1110 65.0 0.5030 35.0 1.200 0.1830 85.3 3.9560 85.3 0.1380 63.9 0.4750 36.8 1.400 0.1280 95.6 3.4140 79.5 0.1600 62.8 0.4630 38.5 1.600 0.1080 105.1 3.0630 74.3 0.1800 62.2 0.4440 38.5 1.800 0.0680 113.1 2.7510 69.4 0.1920 61.5 0.4240 38.5 2.000 0.0370 131.4 2.5150 64.9 0.2190 60.4 0.4100 44.3 2.200 0.0410 171.2 2.3620 60.5 0.2310 59.8 0.3850 49.2 2.400 0.0480 170.0 2.2000 56.8 0.2460 57.9 0.3960 45.0 2.600 0.0540 146.9 2.0470 53.7 0.2700 56.4 0.3650 54.6 2.800 0.0760 127.6 1.9320 49.2 0.2980 56.3 0.3790 55.9 3.000 0.0900 111.8 1.8520 45.8 0.3190 52.5 0.3160 61.2 (v ce = 3 v, i c = 10 ma, z o = 50 ? ) frequency s 11 s 21 s 12 s 22 (ghz) mag ang mag ang mag ang mag ang 0.200 0.542 38.9 15.738 136.5 0.035 73.8 0.789 22.9 0.400 0.348 53.6 10.350 114.2 0.058 66.8 0.626 29.9 0.600 0.247 62.6 7.604 102.2 0.075 70.8 0.529 31.7 0.800 0.168 70.7 5.939 93.4 0.094 69.1 0.474 30.9 1.000 0.120 73.9 4.899 86.4 0.106 69.3 0.457 31.3 1.200 0.091 79.6 4.218 81.0 0.138 68.3 0.427 33.1 1.400 0.060 85.7 3.615 76.0 0.160 66.9 0.407 34.6 1.600 0.041 97.8 3.244 71.5 0.179 65.2 0.408 35.2 1.800 0.016 68.1 2.884 66.9 0.200 66.8 0.383 38.5 2.000 0.017 54.7 2.625 63.0 0.217 62.8 0.375 39.4 2.200 0.040 109.0 2.480 59.0 0.238 62.1 0.361 45.8 2.400 0.053 114.8 2.291 55.5 0.262 58.2 0.356 42.6 2.600 0.054 97.4 2.139 52.6 0.289 59.3 0.337 51.4 2.800 0.084 99.5 1.995 47.9 0.292 54.8 0.326 49.9 3.000 0.108 87.6 1.917 45.4 0.331 54.4 0.274 58.4
2sc4955 6 data sheet pu10038ej01v0ds m8e 00. 4 - 0110 the information in this document is current as of october, 2001. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation, nec compound semiconductor devices, ltd. and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ?
2sc4955 nec compound semiconductor devices hong kong limited hong kong head office taipei branch office korea branch office tel: +852-3107-7303 tel: +886-2-8712-0478 tel: +82-2-528-0301 fax: +852-3107-7309 fax: +886-2-2545-3859 fax: +82-2-528-0302 nec electron devices european operations http://www.nec.de/ tel: +49-211-6503-101 fax: +49-211-6503-487 california eastern laboratories, inc. http://www.cel.com/ tel: +1-408-988-3500 fax: +1-408-988-0279 0110 nec compound semiconductor devices, ltd. 5th sales group, sales division tel: +81-3-3798-6372 fax: +81-3-3798-6783 e-mail: salesinfo@csd-nec.com business issue nec compound semiconductor devices, ltd. http://www.csd-nec.com/ sales engineering group, sales division e-mail: techinfo@csd-nec.com fax: +81-44-435-1918 technical issue
|
