SI6975DQ vishay siliconix new product document number: 71319 s-02318?rev. a, 23-oct-00 www.vishay.com 1 dual p-channel 12-v (d-s) mosfet
v ds (v) r ds(on) ( ) i d (a) 0.027 @ v gs = ?4.5 v ?5.1 ?12 0.035 @ v gs = ?2.5 v ?4.5 0.046 @ v gs = ?1.8 v ?3.9 SI6975DQ d 1 s 1 s 1 g 1 1 2 3 4 8 7 6 5 d 2 s 2 s 2 g 2 tssop-8 top view s 1 g 1 d 1 p-channel mosfet s 2 g 2 d 2 p-channel mosfet
parameter symbol 10 secs steady state unit drain-source voltage v ds ?12 gate-source voltage v gs 8 v t a = 25 c ?5.1 ?4.3 continuous drain current (t j = 150 c) a t a = 70 c i d ?4.1 ?3.5 pulsed drain current (10 s pulse width) i dm ?30 a continuous source current (diode conduction) a i s ?1.0 ?0.7 t a = 25 c 1.14 0.83 maximum power dissipation a t a = 70 c p d 0.73 0.53 w operating junction and storage temperature range t j , t stg ?55 to 150 c
parameter symbol typical maximum unit t 10 sec 86 110 maximum junction-to-ambient a steady state r thja 124 150 c/w maximum junction-to-foot (drain) steady state r thjf 52 65 c/w notes a. surface mounted on 1? x 1? fr4 board.
SI6975DQ vishay siliconix new product www.vishay.com 2 document number: 71319 s-02318 ? rev. a, 23-oct-00 parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = ? 5 ma ? 0.45 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = ? 9.6 v, v gs = 0 v ? 1 zero gate voltage drain current i dss v ds = ? 9.6 v, v gs = 0 v, t j = 70 c ? 25 a on-state drain current a i d(on) v ds = ? 5 v, v gs = ? 4.5 v ? 20 a v gs = ? 4.5 v, i d = ? 5.1 a 0.022 0.027 drain-source on-state resistance a r ds(on) v gs = ? 2.5 v, i d = ? 4.5 a 0.028 0.035 ds(on) v gs = ? 1.8 v, i d = ? 3.9 a 0.037 0.046 forward transconductance a g fs v ds = ? 5 v, i d = ? 5.1 a 20 s diode forward voltage a v sd i s = ? 1.0 a, v gs = 0 v ? 0.65 ? 1.1 v dynamic b total gate charge q g 23 30 gate-source charge q gs v ds = ? 6 v, v gs = ? 4.5 v, i d = ? 5.1 a 3.0 nc gate-drain charge q gd 4.3 turn-on delay time t d(on) 25 40 rise time t r v dd = ? 6 v, r l = 6 32 50 turn-off delay time t d(off) v dd = ? 6 v, r l = 6 i d ? 1 a, v gen = ? 4.5 v, r g = 6 96 140 ns fall time t f 62 95 source-drain reverse recovery time t rr i f = ? 1.0 a, di/dt = 100 a/ s 60 100 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 t c = ? 55 c 125 c 25 c transfer characteristics v gs ? gate-to-source voltage (v) ? drain current (a) i d 0 6 12 18 24 30 0246810 v gs = 5 thru 2.5 v output characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d 2 v 0.5, 1 v 1.5 v
SI6975DQ vishay siliconix new product document number: 71319 s-02318 ? rev. a, 23-oct-00 www.vishay.com 3 0 800 1600 2400 3200 4000 024681012 ? on-resistance ( r ds(on) ) 0.60 0.80 1.00 1.20 1.40 1.60 ? 50 ? 25 0 25 50 75 100 125 150 0 1 2 3 4 5 0 5 10 15 20 25 0.00 0.02 0.04 0.06 0.08 0.10 0 5 10 15 20 25 30 v ds ? drain-to-source voltage (v) c rss v ds = 6 v i d = 5.1 a i d ? drain current (a) v gs = 4.5 v i d = 5.1 a gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) c ? capacitance (pf) v gs capacitance on-resistance vs. junction t emperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) 0.0 0.3 0.6 0.9 1.2 1.5 0.00 0.02 0.04 0.06 0.08 0.10 02468 t j = 25 c i d = 5.1 a 30 10 1 source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s v gs = 4.5 v t j = 150 c v gs = 2.5 v v gs = 1.8 v c oss c iss
SI6975DQ vishay siliconix new product www.vishay.com 4 document number: 71319 s-02318 ? rev. a, 23-oct-00 0 40 80 20 power (w) single pulse power, junction-to-ambient time (sec) 60 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 ? 0.4 ? 0.2 0.0 0.2 0.4 0.6 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold voltage variance (v) v gs(th) t j ? temperature ( c) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 124 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance 0.1 10 1 0.01 0.001 100
|
