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| savantic semiconductor product specification silicon npn power transistors BUV50 d escription with to-3 package high dielectric strength short switching time applications suitable for use in clocked voltatge converters pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 250 v v ceo collector-emitter voltage open base 125 v v ebo emitter-base voltage open collector 7 v i c collector current 25 a i cm collector current-peak 50 a i b base current 6 a i bm base current-peak 12 a p t total power dissipation t mb - 25 150 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 1.17 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BUV50 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a ; l=25mh 125 v v (br)ebo emitter-base breakdown voltage i e =50ma; i c =0 7 v v cesat-1 collector-emitter saturation voltage i c =10a; i b =0.5a t c =100 0.8 0.9 v v cesat-2 collector-emitter saturation voltage i c =20a; i b =2a t c =100 0.9 1.5 v v cesat-3 collector-emitter saturation voltage i c =24a; i b =3a t c =100 1.2 1.8 v v besat-1 base-emitter saturation voltage i c =20a; i b =2a t c =100 1.6 1.7 v v besat-2 base-emitter saturation voltage i c =24a; i b =3a t c =100 1.7 1.9 v i cbo collector cut-off current v cb =v cbo(br) ; i e =0 t c =100 1 5 ma i ebo emitter cut-off current v eb =5v; i c =0 1 ma h fe dc current gain i c =5a ; v ce =4v 30 savantic semiconductor product specification 3 silicon npn power transistors BUV50 package outline fig.2 outline dimensions |
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