bc856 thru bc859 vishay semiconductors formerly general semiconductor document number 88169 www.vishay.com 09-may-02 1 small signal transistors (pnp) 0.079 (2.0) 0.037 (0.95) 0.035 (0.9) 0.031 (0.8) 0.037 (0.95) maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol value unit bc856 80 collector-base voltage bc857 v cbo 50 v bc858, bc859 30 bc856 80 collector-emitter voltage (base shorted) bc857 v ces 50 v bc858, bc859 30 bc856 65 collector-emitter voltage (base open) bc857 v ceo 45 v bc858, bc859 30 emitter-base voltage v ebo 5v collector current i c 100 ma peak collector current i cm 200 ma peak base current i bm 200 ma peak emitter current i em 200 ma power dissipation at t sb = 50 cp tot 310 (1) mw thermal resistance junction to ambient air r ja 450 (1) c/w thermal resistance junction to substrate backside r sb 320 (1) c/w junction temperature t j 150 c storage temperature range t s 65 to +150 c note: (1) device on fiberglass substrate, see layout on third page. .016 (0.4) .056 (1.43 ) .037(0.95) .037(0.95) max. .004 (0.1) .122 (3.1) .016 (0.4) .016 (0.4) 1 2 3 top view .102 (2.6) .007 (0.175) .045 (1.15) .110 (2.8) .052 (1.33 ) .005 (0.125) .094 (2.4) .037 (0.95) features pnp silicon epitaxial planar transistors for switching and af amplifier applications. especially suited for automatic insertion in thick and thin-film circuits. these transistors are subdivided into three groups (a, b, and c) according to their current gain. the type bc856 is available in groups a and b, however, the types bc857, bc558 and bc859 can be supplied in all three groups. the bc849 is a low noise type. as complementary types, the npn transistors bc846...bc849 are recomended. to-236ab (sot-23) mechanical data case: sot-23 plastic package weight: approx. 0.008g packaging codes/options: e8/10k per 13 reel (8mm tape), 30k/box e9/3k per 7 reel (8mm tape), 30k/box dimensions in inches and (millimeters) mounting pad layout type marking bc856a 3a b3b bc857a 3e b3f c3g type marking bc858a 3j b3k c3l bc859a 4a b4b c4c pin configuration 1 = base, 2 = emitter, 3 = collector
bc856 thru bc859 vishay semiconductors formerly general semiconductor www.vishay.com document number 88169 2 09-may-02 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit current gain current gain group a v ce = 5v, i c = 2ma 220 bh fe f = 1khz 330 c 600 input impedance current gain group a v ce = 5v, i c = 2ma 1.6 2.7 4.5 bh ie f = 1khz 3.2 4.5 8.5 k ? c 6.0 8.7 15.0 output admittance current gain group a v ce = 5v, i c = 2ma 18 30 bh oe f = 1khz 30 60 s c 60 110 reverse voltage current gain group a v ce = 5v, i c = 2ma 1.5 ? 10 4 transfer ratio b h re f = 1khz 2 ? 10 4 c 3 ? 10 4 dc current gain current gain group a h fe v ce = 5v, i c = 10 a 90 b 150 c 270 current gain group a h fe v ce = 5 v, i c = 2ma 110 180 220 b 200 290 450 c 420 520 800 collector saturation voltage v cesat i c = 10 ma, i b = 0.5ma 90 300 mv i c = 100 ma, i b = 5ma 250 650 base saturation voltage v besat i c = 10 ma, i b = 0.5ma 700 mv i c = 100 ma, i b = 5ma 900 base-emitter voltage v beon v ce = 5 v, i c = 2ma 600 660 750 mv v ce = 5 v, i c = 10ma 820 collector-base cutoff current i cbo v cb = 30v 15 na v cb = 30v, t j = 150 ? c 5a gain-bandwidth product f t v ce = 5v, i c = 10ma 150 mhz f = 100mhz collector-base capacitance c cbo v cb = 10v, f = 1mhz 6pf noise figure bc856, bc857, bc858 v ce = 5v, i c = 200 a 210 bc859 r g =2k ? , f = 1khz, ? f = 200 hz 14 f db bc859 v ce = 5v, i c = 200 a 1.2 4 r g =2k ? , f = 30...15000hz note: (1) device on fiberglass substrate, see layout on next page
bc856 thru bc859 vishay semiconductors formerly general semiconductor document number 88169 www.vishay.com 09-may-02 3 0.59 (15) 0.2 (5) 0.03 (0.8) 0.30 (7.5) 0.12 (3) .04 (1) 0.06 (1.5) 0.20 (5.1) .08 (2) .08 (2) .04 (1) 0.47 (12) dimensions in inches (millimeters) layout for r ja test thickness: fiberglass 0.059 in. (1.5 mm) copper leads 0.012 in. (0.3 mm) admissible power dissipation versus temperature of substrate backside device on fiblerglass substrate, see layout pulse thermal resistance versus pulse duration (normalized) device on fiblerglass substrate, see layout dc current gain versus collector current collector?ase cutoff current versus ambient temperature
bc856 thru bc859 vishay semiconductors formerly general semiconductor www.vishay.com document number 88169 4 09-may-02 ratings and characteristic curves (t a = 25 c unless otherwise noted)
bc856 thru bc859 vishay semiconductors formerly general semiconductor document number 88169 www.vishay.com 09-may-02 5 ratings and characteristic curves (t a = 25 c unless otherwise noted)
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