unisonic technologies co., ltd ut4101 power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2010 unisonic technologies co., ltd qw-r502-164.c p-channel enhancement mode ? description the utc ut4101 is p-channel enhancement mode power mosfet, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? symbol 2.gate 1.source 3.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UT4101L-AE2-R ut4101g-ae2-r sot-23-3 s g d tape reel ut4101l-ae3-r ut4101g-ae3-r sot-23 s g d tape reel ? marking 41a l: lead free g: halogen free
ut4101 power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r502-164.c ? absolute maximum ratings (t j = 25 , unless otherwise specified) parameter symbol rating units drain-source voltage v ds -20 v gate-source voltage v gs 8.0 v continuous drain current (note 3) i d -2.4 a pulsed drain current (note 1, 2) i dm -7.5 a power dissipation p d 1.25 w junction temperature t j +150 storage temperature t stg -55 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol min typ max unit junction-to-ambient 100 /w ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =-250a -20 v drain-source leakage current i dss v ds =-16 v, v gs =0 v -1.0 a gate-source leakage current i gss v ds =0 v, v gs = 8.0 v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =-250 a -0.40 -0.72 -1.5 v v gs =-4.5 v, i d =-1.6 a 70 85 v gs =-2.5 v, i d =-1.3 a 90 120 drain-source on-state resistance (note 2) r ds(on) v gs =-1.8 v, i d =-0.9 a 112 210 m ? dynamic parameters input capacitance c iss 675 output capacitance c oss 100 reverse transfer capacitance c rss v ds =-10 v, v gs =0v, f=1mhz 75 pf switching parameters turn-on delay time t d(on) 7.5 turn-on rise time t r 12.6 turn-off delay time t d(off) 30.2 turn-off fall-time t f v gs =-4.5v,v ds =-10v,r g =6.0 ? , i d =-1.6a 21.0 ns gate charge q g v ds =-10 v, v gs =-4.5 v, i d =-1.6a 7.5 8.5 gate source charge q gs 1.2 gate drain charge q gd v ds =-10 v, i d =-1.6a 2.2 nc source- drain diode ratings and characteristics drain-source diode forward voltage(note2) v sd v gs =0v, i s =-2.4 a -0.82 -1.2 v maximum continuous drain-source diode forward current i s -2.4 a reverse recovery time t rr v gs =0v, di sd /dt=100a/ s, i s =-1.6a 12.8 15 ns reverse recovery charge q rr 1008 nc note: 1. pulse width limited by t j(max) 2. pulse width 300us, duty cycle 2%. 3. surface mounted on 1 in 2 copper pad of fr4 board
ut4101 power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r502-164.c ? typical characteristics drain current,-i d (a) drain current,-i d (a) drain to source on- resistance,r ds(on) (m ) drain to source on- resistance,r ds(on) (m ) drain-to-source resistance (normalized),r ds(on) leakage,-i dss (na)
ut4101 power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r502-164.c ? typical characteristics(cont.) capacitance,c (pf) gate-to-source voltage,-v gs (v) drain-to-source voltage,-v ds (v) source current,-i s (a) time,t (ns) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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