?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com fdp79n15 / FDPF79N15 rev. a fdp79n15 / FDPF79N15 150v n-channel mosfet may 2006 unifet tm fdp79n15 / FDPF79N15 150v n-channel mosfet features ? 79a, 150v, r ds(on) = 0.03 @v gs = 10 v ? low gate charge ( typical 56 nc) ? low crss ( typical 96pf) ?fast switching ? improved dv/dt capability description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power supplies and active power factor correction. to-220 fdp series g s d to-220f fdpf series g s d d g s absolute maximum ratings symbol parameter fdp79n15 FDPF79N15 unit v dss drain-source voltage 150 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 79 50 79* 50* a a i dm drain current - pulsed (note 1) 316 316* a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 1669 mj i ar avalanche current (note 1) 79 a e ar repetitive avalanche energy (note 1) 46.3 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 463 3.7 31 0.25 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c *drain current limited by maximum junction temperature thermal characteristics symbol parameter fdp79n15 FDPF79N15 unit r jc thermal resistance, junction-to-case 0.27 -- c/w r ja thermal resistance, junction-to-ambient 62.5 62.5 c/w
2 www.fairchildsemi.com fdp79n15 / FDPF79N15 rev. a fdp79n15 / FDPF79N15 150v n-channel mosfet package marking and ordering information device marking device package reel size tape width quantity fdp79n15 fdp79n15 to-220 - - 50 FDPF79N15 FDPF79N15 to-220f - - 50 electrical characteristics t c = 25c unless otherwise noted symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 a, t j = 25 c 150 -- -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c -- 0.15 -- v/ c i dss zero gate voltage drain current v ds = 150v, v gs = 0v v ds = 120v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 39.5a -- 0.025 0.03 g fs forward transconductance v ds = 40v, i d = 39.5a (note 4) -- 46 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 2620 3410 pf c oss output capacitance -- 730 950 pf c rss reverse transfer capacitance -- 96 140 pf switching characteristics t d(on) turn-on delay time v dd = 75v, i d = 79a r g = 25 (note 4, 5) -- 50 112 ns t r turn-on rise time -- 200 410 ns t d(off) turn-off delay time -- 55 120 ns t f turn-off fall time -- 38 85 ns q g total gate charge v ds = 120v, i d = 79a v gs = 10v (note 4, 5) -- 56 73 nc q gs gate-source charge -- 18 -- nc q gd gate-drain charge -- 21 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 79 a i sm maximum pulsed drain-source diode forward current -- -- 316 a v sd drain-source diode forward voltage v gs = 0v, i s = 79a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 79a di f /dt =100a/ s (note 4) -- 136 -- ns q rr reverse recovery charge -- 2.1 -- c notes: 1. repetitive rating: pulse width limit ed by maximum junction temperature 2. l = 0.357mh, i as = 79a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 79a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics
3 www.fairchildsemi.com fdp79n15 / FDPF79N15 rev. a fdp79n15 / FDPF79N15 150v n-channel mosfet typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] 2 4 6 8 10 12 10 0 10 1 10 2 150 o c 25 o c -55 o c notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariation vs. s ource current and temperatue 0 25 50 75 100 125 150 175 200 0.02 0.03 0.04 0.05 0.06 0.07 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ],drain-source on -resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 0 10 1 10 2 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] figure 5. capacitance characteristics f igure 6. gate charge characteristics 10 -1 10 0 10 1 0 1000 2000 3000 4000 5000 6000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 0 102030405060 0 2 4 6 8 10 12 v ds = 75v v ds = 30v v ds = 120v note : i d = 79a v gs , gate-source voltage [v] q g , total gate charge [nc]
4 www.fairchildsemi.com fdp79n15 / FDPF79N15 rev. a fdp79n15 / FDPF79N15 150v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 34.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] figure 9-1. maximum safe operating area figure 9-2. maximum safe operating area for fdp79n15 for FDPF79N15 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 dc 100ms 10ms 1ms 100 s 10 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-sourcevoltage[v] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 dc 100ms 10ms 1ms 100 s 10 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-sourcevoltage[v] figure 10. maximum drain current vs. case temperature 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 90 i d , drain current [a] t c , case temperature [ @ ]
5 www.fairchildsemi.com fdp79n15 / FDPF79N15 rev. a fdp79n15 / FDPF79N15 150v n-channel mosfet typical performance characteristics (continued) figure 11-1. transient thermal response curve for fdp79n15 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z jc (t) = 0.27 0 c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ?jc (t), thermal response t 1 , square wave pulse duration [sec] t 1 p dm t 2 figure 11-2. transient thermal response curve for FDPF79N15 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z jc (t) = 0.67 0 c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ?jc (t), thermal response t 1 , square wave pulse duration [sec] t 1 p dm t 2
gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms 6 www.fairchildsemi.com fdp79n15 / FDPF79N15 rev. a fdp79n15 / FDPF79N15 150v n-channel mosfet
peak diode recovery dv/dt test circuit & waveforms 7 www.fairchildsemi.com fdp79n15 / FDPF79N15 rev. a fdp79n15 / FDPF79N15 150v n-channel mosfet
8 www.fairchildsemi.com fdp79n15 / FDPF79N15 rev. a fdp79n15 / FDPF79N15 150v n-channel mosfet mechanical dimensions 4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?3.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?0.05 0.50 +0.10 ?0.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 dimensions in millimeters
9 www.fairchildsemi.com fdp79n15 / FDPF79N15 rev. a fdp79n15 / FDPF79N15 150v n-channel mosfet mechanical dimensions (continued) (7.00) (0.70) max1.47 (30 ) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 ?3.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?0.05 to-220f dimensions in millimeters
10 www.fairchildsemi.com 10 www.fairchildsemi.com fdp79n15 / FDPF79N15 150v n-channel mosfet rev. i19 trademarks the following are registered and unregistere d trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to m ake changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or u se of any product or circuit described herein; neither does it convey any licen se under its patent rights, nor the rights of others. these specifications do not expand the terms of fa irchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express writ ten approval of fairchild semiconductor corporation. as used herein: 1. life support devices or s ystems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect ? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx ? msxpro ? ocx ? ocxpro ? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure ? rapidconnect ? p serdes? scalarpump? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinylogic ? tinyopto? trutranslation? uhc? unifet? ultrafet ? vcx? wire? fact quiet series? across the board. around the world. ? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. spec ifications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. fdp79n15 / FDPF79N15 rev. a
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