CSDD-8M csdd-8n silicon controlled rectifier 8.0 amp, 600 thru 800 volts d 2 pak case central semiconductor corp. tm r1 (24-september 2004) description: the central semiconductor CSDD-8M series type is an epoxy molded silicon controlled rectifier designed for sensing circuit applications and control systems. marking code: full part number maximum ratings: (t c =25c unless otherwise noted) symbol csdd csdd -8m -8n units peak repetitive off-state voltage v drm, v rrm 600 800 v rms on-state current (t c =90c) i t(rms) 8.0 a peak one cycle surge (t=10ms) i tsm 70 a i 2 t value for fusing (t=10ms) i 2 t24a 2 s peak gate power (tp=10s) p gm 40 w average gate power dissipation p g (av) 1.0 w peak forward gate current (tp=10s) i fgm 4.0 a peak forward gate voltage (tp=10s) v fgm 16 v peak reverse gate voltage (tp=10s) v rgm 5.0 v critical rate of rise of on-state current di/dt 50 a/s storage temperature t stg -40 to +150 c junction temperature t j -40 to +125 c thermal resistance ja 60 c/w thermal resistance jc 2.5 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min typ max units i drm, i rrm rated v drm, v rrm 10 a i drm, i rrm rated v drm , v rrm , t c =125c 2.0 ma i gt v d =12v, r l =10 ? 3.0 15 ma i h i t =100ma 7.3 20 ma v gt v d =12v, r l =10 ? 0.9 1.5 v v tm i tm =16a, tp=380s 1.3 1.8 v dv/dt v d = 2 / 3 v drm , t c =125c 200 v/s
min max min max a 0.163 0.189 4.14 4.80 b 0.045 0.055 1.14 1.40 c 0.000 0.010 0.00 0.25 d 0.012 0.028 0.30 0.70 e 0.386 0.409 9.80 10.40 f 0.378 0.417 9.60 10.60 g 0.335 0.358 8.50 9.10 h 0.197 0.236 5.00 6.00 j 0.093 0.108 2.35 2.75 k 0.030 0.035 0.75 0.90 d2pak (rev: r2) dimensions symbol inches millimeters central semiconductor corp. tm d 2 pak case - mechanical outline CSDD-8M csdd-8n silicon controlled rectifier 8.0 amp, 600 thru 800 volts r1 (24-september 2004) lead code: 1) cathode 2) anode 3) gate 4) anode marking code: full part number
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