csd-8m CSD-8N 8.0 amp scr 600 thru 800 volts dpak thyristor case central semiconductor corp. tm r0 (20-may 2004) description: the central semiconductor csd-8m series type is an epoxy molded silicon controlled rectifier designed for sensing circuit applications and control systems. marking code: full part number maximum ratings: (t c =25c unless otherwise noted) csd csd symbol -8m -8n units peak repetitive off-state voltage v drm, v rrm 600 800 v rms on-state current (t c =90c) i t(rms) 8.0 a peak one cycle surge (t=10ms) i tsm 80 a i 2 t value for fusing (t=10ms) i 2 t32a 2 s peak gate power (tp=10s) p gm 40 w average gate power dissipation p g(av) 1.0 w peak forward gate current (tp=10s) i fgm 4.0 a peak forward gate voltage (tp=10s) v fgm 16 v peak reverse gate voltage (tp=10s) v rgm 5.0 v critical rate of rise of on-state current di/dt 50 a/s storage temperature t stg -40 to +150 c junction temperature t j -40 to +125 c electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min typ max units i drm, i rrm rated v drm, v rrm 10 a i drm, i rrm rated v drm , v rrm, t c =125c 2.0 ma i gt v d =12v, r l =10 ? 3.0 15 ma i h i t =100ma 7.3 20 ma v gt v d =12v, r l =10 ? 0.9 1.5 v v tm i tm =16a, tp=380s 1.3 1.8 v dv/dt v d = 2 / 3 v drm, t c =125c 200 v/s
min max min max a 0.086 0.094 2.18 2.39 b 0.018 0.032 0.46 0.81 c 0.035 0.050 0.89 1.27 d 0.205 0.228 5.21 5.79 e 0.047 0.055 1.20 1.40 f 0.018 0.024 0.45 0.60 g 0.250 0.268 6.35 6.81 h 0.205 0.215 5.20 5.46 j 0.235 0.245 5.97 6.22 k 0.100 0.108 2.55 2.74 l 0.025 0.040 0.64 1.02 m 0.025 0.035 0.64 0.89 n dpak thyristor (rev: r0) 2.28 0.090 dimensions symbol inches millimeters central semiconductor corp. tm dpak thyristor case - mechanical outline csd-8m CSD-8N 8.0 amp scr 600 thru 800 volts r0 (20-may 2004) lead code: 1) cathode 2) anode 3) gate 4) anode marking code: full part number
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