the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor np50p04sdg switching p-channel power mosfet data sheet document no. d19072ej2v0ds00 (2nd edition) date published march 2008 ns printed in japan 2007 the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find what:" field. description the np50p04sdg is p-channel mos field effect transis tor designed for high current switching applications. ordering information part number lead plating packing package NP50P04SDG-E1-AY note np50p04sdg-e2-ay note pure sn (tin) tape 2500 p/reel to-252 (mp-3zk) note pb-free (this product does not contai n pb in external electrode.) features ? super low on-state resistance r ds(on)1 = 9.6 m max. (v gs = ? 10 v, i d = ? 25 a) r ds(on)2 = 15 m max. (v gs = ? 4.5 v, i d = ? 25 a) ? low input capacitance c iss = 5000 pf typ. absolute maximum ratings (t a = 25 c) drain to source voltage (v gs = 0 v) v dss ? 40 v gate to source voltage (v ds = 0 v) v gss m 20 v drain current (dc) (t c = 25 c) i d(dc) m 50 a drain current (pulse) note1 i d(pulse) m 150 a total power dissipation (t c = 25 c) p t1 84 w total power dissipation (t a = 25 c) p t2 1.2 w channel temperature t ch 175 c storage temperature t stg ? 55 to + 175 c single avalanche current note2 i as 37 a single avalanche energy note2 e as 136 mj notes 1. pw 10 s, duty cycle 1% 2. starting t ch = 25 c, v dd = ? 20 v, r g = 25 , v gs = ? 20 0 v thermal resistance channel to case thermal resistance r th(ch-c) 1.78 c/w channel to ambient thermal resistance r th(ch-a) 125 c/w (to-252)
data sheet d19072ej2v0ds 2 np50p04sdg electrical characteristics (t a = 25 c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = ? 40 v, v gs = 0 v ? 10 a gate leakage current i gss v gs = m 20 v, v ds = 0 v m 100 na gate to source threshold voltage v gs(th) v ds = v gs , i d = ? 250 a ? 1.0 ? 1.6 ? 2.5 v forward transfer admittance note | y fs | v ds = ? 10 v, i d = ? 25 a 15 33 s drain to source on-state resistance note r ds(on)1 v gs = ? 10 v, i d = ? 25 a 7.7 9.6 m r ds(on)2 v gs = ? 4.5 v, i d = ? 25 a 9.3 15 m input capacitance c iss v ds = ? 10 v, 5000 pf output capacitance c oss v gs = 0 v, 770 pf reverse transfer capacitance c rss f = 1 mhz 420 pf turn-on delay time t d(on) v dd = ? 20 v, i d = ? 25 a, 13 ns rise time t r v gs = ? 10 v, 13 ns turn-off delay time t d(off) r g = 0 405 ns fall time t f 180 ns total gate charge q g v dd = ? 32 v, 100 nc gate to source charge q gs v gs = ? 10 v, 12 nc gate to drain charge q gd i d = ? 50 a 28 nc body diode forward voltage note v f(s-d) i f = ? 50 a, v gs = 0 v 0.95 1.5 v reverse recovery time t rr i f = ? 50 a, v gs = 0 v, 48 ns reverse recovery charge q rr di/dt = ? 100 a/ s 66 nc note pulsed test pw 350 s, duty cycle 2% test circuit 1 avalanche capability r g = 25 50 l v dd v gs = ? 20 0 v bv dss i as i d v ds starting t ch v dd d.u.t. test circuit 3 gate charge test circuit 2 switching time pg. r g 0 v gs ( ? ) d.u.t. r l v dd = 1 s duty cycle 1% v gs wave form v ds wave form v gs ( ? ) 10% 90% v gs 10% 0 v ds ( ? ) 90% 90% t d(on) t r t d(off) t f 10% v ds 0 t on t off pg. pg. 50 d.u.t. r l v dd i g = ? 2 ma ?
data sheet d19072ej2v0ds 3 np50p04sdg typical characteristics (t a = 25 c) derating factor of forward bias safe operating area total power dissipation vs. case temperature dt - percentage of rated power - % 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 200 t ch - channel temperature - c p t - total power dissipation - w 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 200 t c - case temperature - c forward bias safe operating area i d - drain current - a -0.1 -1 -10 -100 -1000 -0.1 -1 -10 -100 dc i d(dc) i d(pulse) t c = 25 c single pulse r d s ( o n ) l i m i t e d ( v g s = ? 1 i 0 v ) 1 i 0 m i s 1 i m i s p o w e r d i s s i p a t i o n l i m i t e d p w = 1 i 0 0 s v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 r th(ch-a) = 125 c/w i r th(ch-c) = 1.78 c/w i single pulse pw - pulse width - s 100 1 m 10 m 100 m 1 10 100 1000
data sheet d19072ej2v0ds 4 np50p04sdg drain current vs. drain to source voltage forward transfer characteristics i d - drain current - a 0 -50 -100 -150 0 -1-2-3 v gs = ? 10 v pulsed ? 4.5 v v ds - drain to source voltage - v i d - drain current - a -0.001 -0.01 -0.1 -1 -10 -100 -1000 0 -1-2-3-4-5 - v ds = ? 10 v pulsed t ch = ? 55 c ? 25 c 25 c 75 c 125 c 150 c 175 c v gs - gate to source voltage - v gate to source threshold voltage vs. channel temperature forward transfer admittance vs. drain current v gs(th) - gate to source threshold voltage - v 0 -0.5 -1 -1.5 -2 -2.5 -3 -75 -25 25 75 125 175 225 v ds = v gs i d = ? 250 a t ch - channel temperature - c | y fs | - forward transfer admittance - s 0.1 1 10 100 -0.1 -1 -10 -100 v ds = ? 10 v pulsed t ch = ? 55 c ? 25 c 25 c 75 c 125 c 150 c 175 c i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m 0 10 20 30 -1 -10 -100 -1000 ? 10 v pulsed v gs = ? 4.5 v i d - drain current - a r ds(on) - drain to source on-state resistance - m 0 10 20 30 0 -5 -10 -15 -20 pulsed i d = ? 50 a ? 25 a ? 10 a v gs - gate to source voltage - v
data sheet d19072ej2v0ds 5 np50p04sdg drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - m 0 10 20 30 -75 -25 25 75 125 175 225 i d = ? 25 a pulsed ? 10 v v gs = ? 4.5 v t ch - channel temperature - c c iss , c oss , c rss - capacitance - pf 10 100 1000 10000 -0.1 -1 -10 -100 v gs = 0 v f = 1 mhz c iss c oss c rss v ds - drain to source voltage - v switching characteristics dynamic input/output characteristics t d(on) , t r , t d(off) , t f - switching time - ns 1 10 100 1000 -0.1 -1 -10 -100 t r t d(off) t d(on) t f v dd = ? 20 v v gs = ? 10 v r g = 0 i d - drain current - a v ds - drain to source voltage - v 0 -10 -20 -30 -40 0 20 40 60 80 100 120 0 -3 -6 -9 -12 v ds i d = ? 50 a v gs v dd = ? 32 v ? 20 v ? 8 v q g - gate charge - nc v gs - gate to source voltage - v source to drain diode forward voltage reverse recovery time vs. diode forward current i f - diode forward current - a -0.01 -0.1 -1 -10 -100 -1000 0 0.5 1 1.5 v gs = ? 10 v 0 v pulsed v f(s-d) - source to drain voltage - v t rr - reverse recovery time - ns 1 10 100 1000 -0.1 -1 -10 -100 di/dt = ? 100 a/ s v gs = 0 v i f - diode forward current - a
data sheet d19072ej2v0ds 6 np50p04sdg package drawing (unit: mm) to-252 (mp-3zk) 6.5 0.2 2.3 0.1 0.5 0.1 0.76 0.12 0 to 0.25 0.5 0.1 1.0 no plating no plating 5.1 typ. 1.0 typ. 6.1 0.2 0.51 min. 4.0 min . 0.8 10.4 max. (9.8 typ.) 4.3 min. 1 4 23 1.14 max. 2.3 2.3 1. gate 2. drain 3. source 4. fin (drain) equivalent circuit source body diode gate drain remark strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
np50p04sdg the information in this document is current as of march, 2008. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec electronics data sheets or data books, etc., for the most up-to-date specifications of nec electronics products. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec electronics. nec electronics assumes no responsibility for any errors that may appear in this document. nec electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec electronics products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec electronics or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the cu stomer. nec e lectronics as sumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec electronics endeavors to enhance the quality, reliability and safety of nec electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. nec electronics products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to nec electronics products developed based on a customer- designated "quality assurance program" for a specific application. the recommended applications of an nec electronics product depend on its quality grade, as indicated below. customers must check the quality grade of each nec electronics product before using it in a particular application. the quality grade of nec electronics products is "standard" unless otherwise expressly specified in nec electronics data sheets or data books, etc. if customers wish to use nec electronics products in applications not intended by nec electronics, they must contact an nec electronics sales representative in advance to determine nec electronics' willingness to support a given application. (note) ? ? ? ? ? ? m8e 02. 11-1 (1) (2) "nec electronics" as used in this statement means nec electronics corporation and also includes its majority-owned subsidiaries. "nec electronics products" means any product developed or manufactured by or for nec electronics (as defined above). computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. "standard": "special": "specific":
|
