fm radio band tuning application. features applicable to fm wide band due to high capacitance ratio. excellent c-v characteristics. variations of capacitance values is little. small package. maximum rating (ta=25 ) dim millimeters 1. anode 1 2. anode 2 3. cathode sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p 7 2 1 3 + _ 2004. 2. 12 1/2 semiconductor technical data KDV1480 variable capacitance diode silicon epitaxial planar diode revision no : 1 electrical characteristics (ta=25 ) type name marking lot no. ca characteristic symbol test condition min. typ. max. unit reverse voltage v r i r =10 a 16 - - v reverse current i r v r =10v - - 50 na capacitance (note1) c 3.0v v r =3.0v, f=1mhz 36.92 - 43.03 pf c 4.5v v r =4.5v, f=1mhz 27.45 - 32.80 c 6.0v v r =6.0v, f=1mhz 19.91 - 25.61 c 8.0v v r =8.0v, f=1mhz 12.77 - 16.84 figure of merit q v r =3.0v, f=100mhz 60 - - capacitance ratio c 3.0v /c 8.0v - 2.50 - 3.00 characteristic symbol rating unit reverse voltage v r 16 v junction temperature t j 150 storage temperature range t stg -55 150 note 1) capacitance value of one diode.
KDV1480 2/2 2004. 2. 12 revision no : 1 10 capacitance c (pf) figure of merit q 500 0 reverse voltage v (v) r r c, q - v 1234567891011 30 50 100 300 10 500 30 50 100 300 q (f=100mhz) c ( f=1mhz) 0.97 0.98 0.99 1.00 1.01 1.02 1.03 capacitance ratio -30 ambient temperature ta ( c) c - ta -20 -10 0 10 20 30 40 50 60 70 80 v =8v r v =3v r 6v 3v 4v 4v 6v 8v
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