rev.2.00 aug 10, 2005, page 1 of 6 3sk317 silicon n-channel dual gate mos fet uhf / vhf rf amplifier rej03g1247-0200 (previous: ade-208-778) rev.2.00 aug. 10, 2005 features ? low noise characteristics; (nf = 1.0 db typ. at f = 200 mhz) ? high power gain characteristics; (pg = 27.6 db typ. at f = 200 mhz) outline renesas package code: ptsp0004za-a (package name: cmpak-4) 1. source 2. gate1 3. gate2 4. drain 1 4 3 2 note: marking is ?zr-?.
3sk317 rev.2.00 aug 10, 2005, page 2 of 6 absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage v ds 14 v gate1 to source voltage v g1s 8 v gate2 to source voltage v g2s 8 v drain current i d 25 ma channel power dissipation pch 100 mw channel temperature tch 150 c storage temperature tstg ?55 to +150 c electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 14 ? ? v i d = 200 a , v g1s = v g2s = ?3 v gate1 to source breakdown voltage v (br)g1ss 8 ? ? v i g1 = 10 a, v g2s = v ds = 0 gate2 to source breakdown voltage v (br)g2ss 8 ? ? v i g2 = 10 a, v g1s = v ds = 0 gate1 to source cutoff current i g1ss ? ? 100 na v g1s = 6 v, v g2s = v ds = 0 gate2 to source cutoff current i g2ss ? ? 100 na v g2s = 6 v, v g1s = v ds = 0 gate1 to source cutoff voltage v g1s(off) 0 0.2 1 v v ds = 10 v, v g2s = 3 v, i d = 100 a gate2 to source cutoff voltage v g2s(off) 0 0.3 1 v v ds = 10 v, v g1s = 3 v, i d = 100 a drain current i ds(op) 4 8 14 ma v ds = 6 v, v g1s = 0.75 v, v g2s = 3 v forward transfer admittance |y fs | 20 25 ? ms v ds = 6 v, v g2s = 3 v i d = 10 ma, f = 1 khz input capacitance ci ss 2.4 3.1 3.5 pf output capacitance co ss 0.8 1.1 1.4 pf reverse transfer capacit ance crss ? 0.021 0.04 pf v ds = 6 v, v g2s = 3 v, i d = 10 ma, f = 1 mhz power gain pg 24 27.6 ? db noise figure nf ? 1.0 1.5 db v ds = 6 v, v g2s = 3 v, i d = 10 ma , f = 200 mhz power gain pg 12 15.6 ? db noise figure nf ? 3 4 db v ds = 6 v, v g2s = 3 v, i d = 10 ma, f = 900 mhz noise figure nf ? 2.7 3.5 db v ds = 6 v, v g2s = 3 v i d = 10 ma, f = 60 mhz
3sk317 rev.2.00 aug 10, 2005, page 3 of 6 main characteristics 200 150 100 50 0 50 100 150 200 channel power dissipation pch (mw) maximum channel power dissipation curve ambient temperature ta (c) drain to source voltage v ds (v) drain current i d (ma) 20 16 12 8 4 0 1 2345 gate1 to source voltage v g1s (v) drain current i d (ma) typical output characteristics 20 16 12 8 4 0 1234 5 gate2 to source voltage v g2s (v) drain current i d (ma) 20 16 12 8 4 0 21 0 468 0.8 v 1.0 v 1.2 v drain current vs. gate1 to source voltage drain current vs. gate2 to source voltage v g2s = 0.5 v 2.0 v 1.5 v 3.0 v 2.5 v 1.0 v v g1s = 0.5 v 1.0 v 1.5 v 2.0 v 2.5 v 3.0 v 0.6 v v g1s = 0.4 v v g2s = 3 v pulse test v ds = 6 v pulse test v ds = 6 v pulse test 30 24 18 12 6 0 0.4 0.8 1.2 1.6 2 1 v v g2s = 0.5 v gate1 to source voltage v g1s (v) forward transfer admittance vs. gate1 to source voltage forward transfer admittance |y fs | (ms) 0 50 40 30 20 10 4 8 12 16 20 drain current i d (ma) power gain pg (db) power gain vs. drain current 1.5 v 3 v 2 v v ds = 6 v f = 1 khz 2.5 v v ds = 6 v v g2s = 3 v f = 200 mhz
3sk317 rev.2.00 aug 10, 2005, page 4 of 6 5 4 3 2 1 048121620 drain current i d (ma) noise figure nf (db) noise figure vs. drain current 50 40 30 10 20 0 246810 drain to source voltage v ds (v) power gain vs. drain to source voltage power gain pg (db) v ds = 6 v v g2s = 3 v f = 200 mhz v g2s = 3 v i d = 10 ma f = 200 mhz 5 4 2 1 0246810 noise figure nf (db) drain to source voltage v ds (v) noise figure vs. drain to source voltage 20 16 12 8 4 0 drain current i d (ma) power gain pg (db) power gain vs. drain current 4 8 12 16 20 048121620 5 3 4 2 1 drain current i d (ma) noise figure nf (db) noise figure vs. drain current 20 16 12 8 4 0 246810 drain to source voltage v ds (v) power gain pg (db) power gain vs. drain to source voltage 3 v g2s = 3 v i d = 10 ma f = 900 mhz v g2s = 3 v i d = 10 ma f = 200 mhz v ds = 6 v v g2s = 3 v f = 900 mhz v ds = 6 v v g2s = 3 v f = 900 mhz
3sk317 rev.2.00 aug 10, 2005, page 5 of 6 10 8 4 2 0246810 noise figure nf (db) drain to source voltage v ds (v) noise figure vs. drain to source voltage 5 4 3 2 1 0 drain current i d (ma) noise figure nf (db) noise figure vs. drain current 4 8 12 16 20 0246810 5 3 4 2 1 noise figure nf (db) noise figure vs. drain to source voltage drain to source voltage v ds (v) 6 v g2s = 3 v i d = 10 ma f = 900 mhz v ds = 6 v v g2s = 3 v f = 60 mhz v g2s = 3 v i d = 10 ma f = 60 mhz
3sk317 rev.2.00 aug 10, 2005, page 6 of 6 package dimensions as m x s y e e 2 b 1 a eh e l l 1 q c d bb b aa b 1 b 3 c 1 c b-b section pattern of terminal position areas b 4 l 1 b 5 l 1 e 1 e 2 e a 3 l p s a a 2 a 1 a a 1 a 2 b b 1 c c 1 d e e h e l l p x y b 4 e 1 l 1 q 0.8 0 0.8 0.25 0.1 1.8 1.15 1.8 0.3 0.2 0.32 0.25 0.9 0.13 0.11 2.0 1.25 0.65 2.1 1.5 0.2 1.1 0.1 1.0 0.4 0.35 0.42 0.5 0.15 2.2 1.35 2.4 0.7 l 1 0.1 0.5 0.6 0.05 0.05 0.45 0.9 dimension in millimeters reference symbol min nom max a 3 e 2 0.6 b 2 0.3 b 3 0.4 b 5 0.55 sc-82a 0.006g mass[typ.] cmpak-4(t) / cmpak-4(t)v ptsp0004za-a renesas code jeita package code package name b a-a section b 2 c 1 c ordering information part name quantity shipping container 3SK317ZR-TL-E 3000 178 mm reel, 8 mm emboss taping note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
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