cdsv3-19-g/20-g/21-g features -fast switching diode. -surface mount package ideally for automatic insertion. -for general purpose switching applications. -high conductance. mechanical data -case: sot -323 -t erminals: solder plated, solderable per mil- std-750, method 2026. -marking: cdsv3-19-g ka8 CDSV3-20-G kt2 cdsv3-21-g kt3 page 1 qw -b0025 smd switching diode high speed rohs device maximum rating (at t a=25c unless otherwise noted) rev :a v ma mw 120 150 200 p d i f v r junction and storage temperature forward current power dissipation parameter symbol v alue unit reverse voltage t j , t stg -55 ~ +150 o c sot -323 dimensions in inches and (millimeters) 200 200 electrical characteristics (at t a=25c unless otherwise noted) v ua v 50 1 1.25 0.1 t rr v (br)r i r v f diode capacitance reverse recovery time reverse leakage current reverse breakdown voltage parameter symbol min max unit forward voltage c d 5 pf t est conditions 100 150 200 ns cdsv3-19-g CDSV3-20-G cdsv3-21-g cdsv3-19-g CDSV3-20-G cdsv3-21-g i r =100ua v r =100v v r =150v v r =200v i f =100ma i f =200ma v r =0v , f=1mh z i f =i r =30ma, irr=0.1 x i r cdsv3-19-g CDSV3-20-G cdsv3-21-g 0.087(2.20) 0.070(1.80) 0.054(1.35) 0.045(1.15) 0.056(1.40) 0.047(1.20) 1 2 3 0.006(0.15) 0.002(0.05) 0.087(2.20) 0.078(2.00) 0.004(0.10)min. 0.004(0.10)max. 0.044(1.10) 0.035(0.90) 0.016(0.40) 0.008(0.20)
characteristic curves (cdsv3-19-g/20-g/21-g) page 2 smd switching diode qw -b0025 fig.1 - forward characteristics rev :a 0.01 0.1 1 10 100 1000 0 1 2 i f , f o r w a r d c u r r e n t ( m a ) v f , forward v oltage (v) o t j =25 c fig.2 - leakage current vs junction t emperature 0.01 0.1 1 10 100 0 i r , l e a k a g e c u r r e n t ( u a ) t j , junction t emperature (c) 100 200
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