semihow rev.a0,jan 2010 htu4 - 600 ? repetitive peak off - state voltage: 600v ? r.m.s on - state current (i t(rms) = 4a ) ? high commutation dv / dt ? sensitive gate triggering 4 mode features absolute maximum ratings (t a =25 ) htu4 -600 600v 4a triac symbol parameter value units v drm repetitive peak off - state voltage 600 v i t(rms) r.m.s on - state current (ta = 107 ) 4 a i tsm surge on - state current (one cycle, 50/60hz, peak, non repetitive) 50hz 30 a 60hz 33 a v gm peak gate voltage 7 v i gm peak gate current 1 a p gm peak gate power dissipation 1.5 w t stg storage temperature range - 40 to +125 t j operating temperature - 40 to +125 v drm = 600 v i t(rms) = 4.0 a htu4 - 600 general description the devices is sensitive gate triac suitable for direct coupling to ttl,htl,cmos and application such as various logic functions , low power ac switching applications, such as fan speed, small light controllers and home appliance equipment. 1.t1 2. t2 3. gate to - 251 2 1 3
semihow rev.a0,jan 2010 htu4 - 600 electrical characteristics (t a =25 ) symbol parameter test conditions min typ max units i gt gate trigger current v d =6v, r l =10 ? 1+, 1 -, 3 - 5 ma 3+ 10 ma v gt gate trigger voltage v d =6v, r l =10 ? 1+, 1 -, 3 - 1.4 v 3+ 1.8 v v gd non trigger gate voltage t j =125 , v d =1/2v drm 0.2 v (dv / dt )c critical rate of rise of off - state voltage at communication t j =125 , v d =2/3v drm (di / dt )c = - 0.5a/ms 5.0 v/ us i h holding current 10 ma i drm repetitive peak off - state current v d =v drm, single phase, half wave, t j =125 1.0 ma v tm peak on - state voltage it=6a , inst, measurement 1.7 v thermal characteristics symbol parameter test conditions min typ max units r jc thermal resistance junction to case 3.0 /w
semihow rev.a0,jan 2010 htu4 - 600 typical characteristics on - state current [a] on - state voltage [v] gate voltage [v] gate current [ma] fig 1. gate characteristics fig 2. on - state voltage fig 3. gate trigger voltage vs. junction temperature fig 4. on - state current vs. maximum power dissipation fig 5. on - state current vs. allowable case temperature fig 6. surge on - state current rating (non - repetitive) power dissipation [w] rms on - state current [a] junction temperature [ ] surge on - state current [a] time [cycles] allowable case temp [ ] rms on - state current [a]
semihow rev.a0,jan 2010 htu4 - 600 typical characteristics transient thermal impedance [ /w] time [sec] junction temperature [ ] fig 7. gate trigger current vs. junction temperature fig 8. transient thermal impedance fig 7. gate trigger characteristics test circuit test procedure test procedure test procedure test procedure
semihow rev.a0,jan 2010 htu4 - 600 package dimension 5.35 0.15 6.6 0.2 0.75 0.15 2.3typ 2.3typ 5.6 0.2 7 0.2 7.5 0.3 0.6 0.1 2.3 0.1 0.5 0.05 1.2 0.3 0.5 +0.1 -0.05 0.8 0.15 to - 251
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