inchange semiconductor isc product specification isc silicon npn power transistor BUV40 description low collector saturation voltage- : v ce( sat ) = 0.8v (max.) @i c = 5.5a high switching speed applications designed for high current, high speed, high power applications. absolute maximum ratings(ta=25 ) symbol parameter value unit v cev collector-emitter voltage v be =-1.5v 250 v v ceo collector-emitter voltage 125 v v ebo emitter-base voltage 7 v i c collector current-continuous 20 a i cm collector current-peak 30 a i b b base current-continuous 4 a i bm base current- peak 6 a p c collector power dissipation @t c =25 120 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.46 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BUV40 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.2a; i b = 0; l= 25mh 125 v v (br)ebo emitter-base breakdown voltage i e = 50ma; i c = 0 7 v v ce (sat)-1 collector-emitter saturation voltage i c = 5.5a; i b = 0.275a 0.8 v v ce (sat)-2 collector-emitter saturation voltage i c = 11a ;i b = 1.1a b 0.9 v v ce (sat)-3 collector-emitter saturation voltage i c = 15a ;i b = 1.875a 1.2 v v be (sat)-1 base-emitter saturation voltage i c = 11a ;i b = 1.1a b 1.6 v v be (sat)-2 base-emitter saturation voltage i c = 15a ;i b = 1.875a 1.9 v i cer collector cutoff current v ce = 250v;r be = 10 v ce = 250v;r be = 10 ;t c =100 1.0 5.0 ma i cev collector cutoff current v ce = 250v;v be = -1.5v v ce = 250v;v be = -1.5v;t c =100 1.0 5.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 1.0 ma switching times, resistive load t r rise time 1.0 s t s storage time 1.0 s t f fall time i c = 15a; i b1 = 1.8a; v cc = 100v; r b2 = 1.3 ; v bb = -5v, t p = 30 s 0.3 s isc website www.iscsemi.cn
|
